scholarly journals High-throughput roll-to-roll X-ray characterization of polymer solar cell active layers

2012 ◽  
Vol 22 (42) ◽  
pp. 22501 ◽  
Author(s):  
Arvid P. L. Böttiger ◽  
Mikkel Jørgensen ◽  
Andreas Menzel ◽  
Frederik C. Krebs ◽  
Jens W. Andreasen
CrystEngComm ◽  
2016 ◽  
Vol 18 (27) ◽  
pp. 5083-5088 ◽  
Author(s):  
Lea H. Rossander ◽  
Thue T. Larsen-Olsen ◽  
Henrik F. Dam ◽  
Thomas M. Schmidt ◽  
Michael Corazza ◽  
...  

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Yiming Chen ◽  
Chi Chen ◽  
Chen Zheng ◽  
Shyam Dwaraknath ◽  
Matthew K. Horton ◽  
...  

AbstractThe L-edge X-ray Absorption Near Edge Structure (XANES) is widely used in the characterization of transition metal compounds. Here, we report the development of a database of computed L-edge XANES using the multiple scattering theory-based FEFF9 code. The initial release of the database contains more than 140,000 L-edge spectra for more than 22,000 structures generated using a high-throughput computational workflow. The data is disseminated through the Materials Project and addresses a critical need for L-edge XANES spectra among the research community.


2016 ◽  
Vol 864 ◽  
pp. 154-158
Author(s):  
Mariya Al Qibtiya ◽  
Eka Cahya Prima ◽  
Brian Yuliarto ◽  
Suyatman

Natural dyes extracted from black rice are used as sensitizer for dye sensitized solar cell. The anthocyanin extracted with various pH in acidic and neutral coditions. Preparation of fotolectrode TiO2 film using doctor blade method and resulting average grain size 33,9 nm using X-Ray Diffractometer. Characterization of morphology and cross-section film TiO2 is confirmed by Scanning Electron microscopy (SEM). Optical absorption using UV-Visible Spectroscopy to obtain spectrum absorbance of anthocyanin in various pH. The current-voltage (J-V) characterization shows the performance DSSC have a match relation to the optical absorption. The best absorption of anthocyanin obtained at pH 6 as well as conversion efficiency reaches 2.26% at this pH condition.


2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa

2008 ◽  
Vol 92 (7) ◽  
pp. 793-798 ◽  
Author(s):  
Jens Wenzel Andreasen ◽  
Suren A. Gevorgyan ◽  
Christian M. Schlepütz ◽  
Frederik Christian Krebs
Keyword(s):  

2017 ◽  
Vol 10 (11) ◽  
pp. 2411-2419 ◽  
Author(s):  
Lea Hildebrandt Rossander ◽  
Henrik Friis Dam ◽  
Jon Eggert Carlé ◽  
Martin Helgesen ◽  
Ivan Rajkovic ◽  
...  

Polymer conformation in solution is more important for R2R solar cell performance than the crystallinity of the final coated film.


2011 ◽  
Vol 21 (6) ◽  
pp. 898-907 ◽  
Author(s):  
W. Shi ◽  
M. Punta ◽  
J. Bohon ◽  
J. M. Sauder ◽  
R. D'Mello ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
W.P. Li ◽  
R. Zhang ◽  
J. Yin ◽  
X.H. Liu ◽  
Y.G. Zhou ◽  
...  

AbstractGaN-based metal-ferroelectric-semiconductor (MFS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) instead of conventional oxides as gate insulators. The GaN and PZT films in the MFS structures have been characterized by various methods such as photoluminescence (PL), wide-angle X-ray diffraction (XRD) and high-resolution X-ray diffraction (HRXRD). The Electric properties of GaN MFS structure with different oxide thickness have been characterized by high-frequency C-V measurement. When the PZT films are as thick as 1 µm, the GaN active layers can approach inversion under the bias of 15V, which can not be observed in the traditional GaN MOS structures. When the PZT films are about 100 nm, the MFS structures can approach inversion just under 5V. All the marked improvements of C-V behaviors in GaN MFS structures are mainly attributed to the high dielectric constant and large polarization of the ferroelectric gate oxide.


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