A digitally controlled rotating field plasma source for analytical spectrometry

2012 ◽  
Vol 27 (8) ◽  
pp. 1287 ◽  
Author(s):  
Krzysztof Jankowski ◽  
Andrzej P. Ramsza ◽  
Edward Reszke ◽  
Anna Tyburska
Keyword(s):  
Plasma Source ◽  
Digitally Controlled ◽  
Analytical Spectrometry ◽  
Rotating Field

SURFACE PLASMA SOURCE OF HYDROGEN ATOMS WITH AN ENERGY OF HUNDREDS eV

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-479-C7-480 ◽  
Author(s):  
V. G. Dudnikov ◽  
G. I. Fiksel'
Keyword(s):  
Plasma Source ◽  
Surface Plasma ◽  
Hydrogen Atoms

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

Recent results in plasma source ion implantation

1992 ◽  
Author(s):  
JOHN CONRAD ◽  
M. ABUZRIBA ◽  
J. BLANCHARD ◽  
D. CHAPEK ◽  
A. CHEN ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Plasma Source ◽  
Plasma Source Ion Implantation

Developments in Plasma-Source Mass Spectrometry

1988 ◽  
Author(s):  
Gary M. Hieftje ◽  
George H. Vickers
Keyword(s):  
Mass Spectrometry ◽  
Plasma Source ◽  
Source Mass
Sign in / Sign up

Export Citation Format

Share Document