Mechanisms for charge trapping in single semiconductor nanocrystals probed by fluorescence blinking

2013 ◽  
Vol 42 (8) ◽  
pp. 3209 ◽  
Author(s):  
Amy A. Cordones ◽  
Stephen R. Leone
2013 ◽  
Vol 138 (20) ◽  
pp. 204705 ◽  
Author(s):  
Jonathan Mooney ◽  
Michael M. Krause ◽  
Jonathan I. Saari ◽  
Patanjali Kambhampati

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


Priroda ◽  
2018 ◽  
pp. 22-31
Author(s):  
A. Rodina ◽  
◽  
D. Yakovlev ◽  

2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  

2014 ◽  
Vol 26 (45) ◽  
pp. 7555-7560 ◽  
Author(s):  
Shota Nunomura ◽  
Xiaozhou Che ◽  
Stephen R. Forrest

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