scholarly journals Charge Trapping in Mixed Organic Donor-Acceptor Semiconductor Thin Films

2014 ◽  
Vol 26 (45) ◽  
pp. 7555-7560 ◽  
Author(s):  
Shota Nunomura ◽  
Xiaozhou Che ◽  
Stephen R. Forrest
Keyword(s):  
Thin Films ◽  
Charge Trapping ◽  
Semiconductor Thin Films ◽  
Donor Acceptor

Photoactive donor-acceptor thin films as prospective materials for evaporated bulk heterojunctions of molecular semiconductors

2008 ◽  
Author(s):  
Derck Schlettwein ◽  
Robin Knecht ◽  
Dominik Klaus ◽  
Christopher Keil ◽  
Günter Schnurpfeil
Keyword(s):  
Thin Films ◽  
Bulk Heterojunctions ◽  
Donor Acceptor ◽  
Molecular Semiconductors

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

2019 ◽  
Vol 19 (7) ◽  
pp. 3777-3784
Author(s):  
Jakub Rozbořil ◽  
Katharina Broch ◽  
Roland Resel ◽  
Ondřej Caha ◽  
Filip Münz ◽  
...  
Keyword(s):  
Thin Films ◽  
Small Molecule ◽  
Organic Semiconductor ◽  
Annealing Behavior ◽  
Semiconductor Thin Films

scholarly journals Memory Devices: Solution‐Processed Stretchable Ag 2 S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory (Adv. Mater. 23/2021)

2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
Self Powered

Solution‐Processed Stretchable Ag 2 S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory

2021 ◽  
pp. 2100066
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
Self Powered

scholarly journals Superior photo-carrier diffusion dynamics in organic-inorganic hybrid perovskites revealed by spatiotemporal conductivity imaging

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejian Ma ◽  
Fei Zhang ◽  
Zhaodong Chu ◽  
Ji Hao ◽  
Xihan Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Relaxation Times ◽  
Charge Trapping ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Electron Hole ◽  
Inorganic Hybrid ◽  
Diffusion Dynamics ◽  
The Difference

AbstractThe outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.

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