The relevance of interfaces for oxide ion transport in yttria stabilized zirconia (YSZ) thin films

2013 ◽  
Vol 15 (4) ◽  
pp. 1097-1107 ◽  
Author(s):  
Matthias Gerstl ◽  
Gernot Friedbacher ◽  
Frank Kubel ◽  
Herbert Hutter ◽  
Jürgen Fleig
Keyword(s):  
Thin Films ◽  
Ion Transport ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Oxide Ion

Oxide ion conduction of yttria-stabilized zirconia films deposited by atomic layer deposition

2008 ◽  
Vol 1098 ◽  
Author(s):  
Cheng-Chieh Chao ◽  
Hong Huang ◽  
Joon Seok Park ◽  
Fritz B. Prinz
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electron Beam Evaporation ◽  
Yttria Stabilized Zirconia ◽  
Ohmic Loss ◽  
Stabilized Zirconia ◽  
Oxide Ion Conductivity ◽  
Layer Deposition ◽  
Oxide Ion

AbstractYttria-stabilized zirconia (YSZ) is one of the most common electrolytes in high temperature solid oxide fuel cell (SOFCs). We utilize atomic layer deposition (ALD) to fabricate the electrolyte of SOFC, which may potentially improve several fundamental characteristics of SOFC. Recently, our group demonstrated that ultra-thin ALD YSZ SOFSs can deliver high power density at low temperatures [1]. These SOFCs demonstrated not only reduction of Ohmic loss, but also enhancement of surface kinetics.The focus of this work is to investigate the surface and bulk conduction characteristics of YSZ films produced by ALD. In plane conductivity was measured as a function of film thickness and temperature dependence. YSZ thin films were deposited on standard 4 ” quartz substrates with thicknesses ranging from 8 nanometers to 55 nanometers. Micro-electrodes were patterned on top of the ALD YSZ layer by standard photolithography process. The impedances of the YSZ thin films with different thicknesses were measured. We have observed higher conductivities for thinner films which were attributed to higher oxide ion conductivity in the vicinity of the surface, and similar phenomenon was observed with YSZ films produced by electron beam evaporation [2].

Effect of Rate on Pulsed Laser Deposition of Yttria-Stabilized Zirconia Electrolyte Thin Films for SOFCs

2015 ◽  
Vol 12 (3) ◽  
Author(s):  
T. Mukai ◽  
T. Fujita ◽  
S. Tsukui ◽  
K. Yoshida ◽  
M. Adachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Ion Conductivity ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Deposition Rate ◽  
Stabilized Zirconia ◽  
Oxide Ion Conductivity ◽  
Boundary Width ◽  
Oxide Ion

Yttria-stabilized zirconia (YSZ) thin films were deposited by pulsed laser deposition (PLD) at laser repetition frequencies of 10–50 Hz. Controlling the laser repetition frequency can achieve high deposition rate of YSZ, but high deposition rate at high laser repetition frequency can adversely affect the crystallinity of the resulting film. In the present work, X-ray diffraction (XRD) of YSZ thin films deposited at 10–50 Hz unexpectedly indicated no significant differences. Well-crystallized YSZ thin films were obtained for all laser repetition frequencies. This result may be due to a sufficient substrate temperature of 1000 K during processing. The oxide-ion conductivity of each thin film was comparable to that of bulk YSZ. Only minor differences in Y2O3 content, residual stress, grain size, and grain-boundary width were observed among the films. We concluded that similar quality YSZ thin films were obtained at all deposition frequencies. Oxide-ion conductivity was affected by the temperature at which the substrate was deposited. The YSZ thin films deposited at 900 K and 1000 K showed similar oxide-ion conductivity and films deposited at 800 K showed lower oxide-ion conductivity. This difference could perhaps be due to narrow grain-boundary width. The YSZ thin film with highest oxide-ion conductivity was fabricated at an intermediate substrate temperature of 900 K with a deposition rate of 86 nm·min−1 at 50 Hz, without additional high-temperature annealing greater than 1273 K. The YSZ growth rates were faster than the rates for other gas-phase methods such as midfrequency and DC sputtering.

Electrochemical behavior of silver thin films interfaced with yttria-stabilized zirconia

2014 ◽  
Vol 18 (8) ◽  
pp. 2267-2277 ◽  
Author(s):  
Michèle Fee ◽  
Spyridon Ntais ◽  
Arnaud Weck ◽  
Elena A. Baranova
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Silver Thin Films

Production of Dense Yttria-Stabilized Zirconia Thin Films by Dip-Coating for IT-SOFC Application

2004 ◽  
Vol 34 (6) ◽  
pp. 637-641 ◽  
Author(s):  
Yonglian Zhang ◽  
Jianfeng Gao ◽  
Guangyao Meng ◽  
Xingqin Liu
Keyword(s):  
Thin Films ◽  
Dip Coating ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia
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