Effect of Rate on Pulsed Laser Deposition of Yttria-Stabilized Zirconia Electrolyte Thin Films for SOFCs

2015 ◽  
Vol 12 (3) ◽  
Author(s):  
T. Mukai ◽  
T. Fujita ◽  
S. Tsukui ◽  
K. Yoshida ◽  
M. Adachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Ion Conductivity ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Deposition Rate ◽  
Stabilized Zirconia ◽  
Oxide Ion Conductivity ◽  
Boundary Width ◽  
Oxide Ion

Yttria-stabilized zirconia (YSZ) thin films were deposited by pulsed laser deposition (PLD) at laser repetition frequencies of 10–50 Hz. Controlling the laser repetition frequency can achieve high deposition rate of YSZ, but high deposition rate at high laser repetition frequency can adversely affect the crystallinity of the resulting film. In the present work, X-ray diffraction (XRD) of YSZ thin films deposited at 10–50 Hz unexpectedly indicated no significant differences. Well-crystallized YSZ thin films were obtained for all laser repetition frequencies. This result may be due to a sufficient substrate temperature of 1000 K during processing. The oxide-ion conductivity of each thin film was comparable to that of bulk YSZ. Only minor differences in Y2O3 content, residual stress, grain size, and grain-boundary width were observed among the films. We concluded that similar quality YSZ thin films were obtained at all deposition frequencies. Oxide-ion conductivity was affected by the temperature at which the substrate was deposited. The YSZ thin films deposited at 900 K and 1000 K showed similar oxide-ion conductivity and films deposited at 800 K showed lower oxide-ion conductivity. This difference could perhaps be due to narrow grain-boundary width. The YSZ thin film with highest oxide-ion conductivity was fabricated at an intermediate substrate temperature of 900 K with a deposition rate of 86 nm·min−1 at 50 Hz, without additional high-temperature annealing greater than 1273 K. The YSZ growth rates were faster than the rates for other gas-phase methods such as midfrequency and DC sputtering.

Preparation of Oxygen Ion Conducting Doped Lanthanum Gallate Thin Films on Amorphous and Single Crystal Substrates by Pulsed Laser Deposition

2003 ◽  
Vol 796 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Seiji Kanazawa ◽  
Toshikazu Ohkubo ◽  
Yukiharu Nomoto ◽  
Yusaku Takita ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Complex Impedance ◽  
Pulsed Laser ◽  
Ion Conductivity ◽  
Laser Deposition ◽  
Lanthanum Gallate ◽  
Oxide Ion Conductivity ◽  
Oxide Ion

ABSTRACTAn La1-xSrxGa1-y-zMgyCozO3-(x+y+z)/2 (LSGMCO) has attracted much attention because it can be useable as an electrolyte of a solid oxide fuel cell due to its high oxide ion conductivity. We prepared LSGMCO thin films on silica glass and LaAlO3 single crystal substrates by pulsed laser deposition and evaluated their properties. LSGMCO thin films deposited at 800°C were poly-crystal and the deposition pressure affected their surface morphologies. In the case of the LaAlO3 single crystal substrate, a c-axis oriented LSGMCO thin film was obtained. DC conductivity and complex impedance of LSGMCO thin films were measured in vacuum atmosphere to investigate the effect of the crystal orientation on the oxide ion conductivity. It was revealed that resistance at a grain boundary of films is more dominant compare with the grain interior.

Oxide ion conduction of yttria-stabilized zirconia films deposited by atomic layer deposition

2008 ◽  
Vol 1098 ◽  
Author(s):  
Cheng-Chieh Chao ◽  
Hong Huang ◽  
Joon Seok Park ◽  
Fritz B. Prinz
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electron Beam Evaporation ◽  
Yttria Stabilized Zirconia ◽  
Ohmic Loss ◽  
Stabilized Zirconia ◽  
Oxide Ion Conductivity ◽  
Layer Deposition ◽  
Oxide Ion

AbstractYttria-stabilized zirconia (YSZ) is one of the most common electrolytes in high temperature solid oxide fuel cell (SOFCs). We utilize atomic layer deposition (ALD) to fabricate the electrolyte of SOFC, which may potentially improve several fundamental characteristics of SOFC. Recently, our group demonstrated that ultra-thin ALD YSZ SOFSs can deliver high power density at low temperatures [1]. These SOFCs demonstrated not only reduction of Ohmic loss, but also enhancement of surface kinetics.The focus of this work is to investigate the surface and bulk conduction characteristics of YSZ films produced by ALD. In plane conductivity was measured as a function of film thickness and temperature dependence. YSZ thin films were deposited on standard 4 ” quartz substrates with thicknesses ranging from 8 nanometers to 55 nanometers. Micro-electrodes were patterned on top of the ALD YSZ layer by standard photolithography process. The impedances of the YSZ thin films with different thicknesses were measured. We have observed higher conductivities for thinner films which were attributed to higher oxide ion conductivity in the vicinity of the surface, and similar phenomenon was observed with YSZ films produced by electron beam evaporation [2].

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

2011 ◽  
Vol 191 (1) ◽  
pp. 12-23 ◽  
Author(s):  
Sebastian Heiroth ◽  
Ruggero Frison ◽  
Jennifer L.M. Rupp ◽  
Thomas Lippert ◽  
Eszter J. Barthazy Meier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Grain Growth ◽  
Pulsed Laser ◽  
Growth Characteristics ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

2009 ◽  
Vol 421-422 ◽  
pp. 111-114
Author(s):  
Hyun Young Go ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Tomohiko Yoshioka ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Ferrite ◽  
Ferroelectric Properties ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Stabilized Zirconia ◽  
Si Substrates ◽  
Crystal Orientations ◽  
Mn Doped

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Sign in / Sign up

Export Citation Format

Share Document