Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

2012 ◽  
Vol 3 (3) ◽  
pp. 846-850 ◽  
Author(s):  
Jinling Li ◽  
Jing-Jing Chang ◽  
Huei Shuan Tan ◽  
Hui Jiang ◽  
Xiaodong Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Type Semiconductor ◽  
Stable Field

Hydrogen-Bonded Semiconducting Pigments for Air-Stable Field-Effect Transistors

2012 ◽  
Vol 25 (11) ◽  
pp. 1563-1569 ◽  
Author(s):  
Eric Daniel Głowacki ◽  
Mihai Irimia-Vladu ◽  
Martin Kaltenbrunner ◽  
Jacek Gsiorowski ◽  
Matthew S. White ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stable Field ◽  
Hydrogen Bonded

Toward air-stable field-effect transistors with a tin iodide-based hybrid perovskite semiconductor

2019 ◽  
Vol 125 (23) ◽  
pp. 235501 ◽  
Author(s):  
Toshinori Matsushima ◽  
Shinobu Terakawa ◽  
Matthew R. Leyden ◽  
Takashi Fujihara ◽  
Chuanjiang Qin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hybrid Perovskite ◽  
Tin Iodide ◽  
Stable Field

Charge transfer properties of phthalocyaninato zinc complexes for organic field-effect transistors: tuning semiconductor nature via peripheral substituents

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Zinc Complexes ◽  
Hole Injection ◽  
Type Semiconductor ◽  
P Type ◽  
Injection Barrier

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.

FABRICATION AND PROPERTIES OF La0.8Ca0.2MnO3 FIELD EFFECT TRANSISTORS

2007 ◽  
Vol 14 (04) ◽  
pp. 745-749
Author(s):  
WANG LI FENG ◽  
ZHANG WEI WEI ◽  
ZHOU YU QING ◽  
ZHU MING
Keyword(s):  
Field Effect ◽  
Colossal Magnetoresistance ◽  
Field Effect Transistors ◽  
Sudden Increase ◽  
Gate Bias ◽  
Si Substrate ◽  
First Order ◽  
Type Semiconductor ◽  
Different Temperatures ◽  
P Type

The inverted-gate colossal magnetoresistance-field-effect-transistors (CMR-FETs) were designed and successfully fabricated on the Si substrate by using semiconductor techniques. The studies on the capacitance properties were carried out under different temperatures, different frequencies, and different gate biases. The results indicate that La 0.8 Ca 0.2 MnO 3 is the typical p-type semiconductor. It was shown that the capacitance increases with the increasing of the temperature under certain gate bias. The sudden increase of the capacitance at 160 K was observed and needeed to be studied further. Meanwhile the capacitance decreased as the frequency increased with first order exponential decay fitting.

New n-type semiconductor material based on styryl fullerene for organic field-effect transistors

2021 ◽  
Vol 31 (5) ◽  
pp. 641-643
Author(s):  
Airat R. Tuktarov ◽  
Nuri M. Chobanov ◽  
Zarema R. Sadretdinova ◽  
Renat B. Salikhov ◽  
Ilnur N. Mullagaliev ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Material ◽  
Organic Field Effect Transistors ◽  
Type Semiconductor

scholarly journals Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

2015 ◽  
Vol 107 (4) ◽  
pp. 043304 ◽  
Author(s):  
Thangavel Kanagasekaran ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Hui Shang ◽  
Ryotaro Kumashiro ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Injection ◽  
Stable Field

Organic Electronics: Hydrogen-Bonded Semiconducting Pigments for Air-Stable Field-Effect Transistors (Adv. Mater. 11/2013)

2013 ◽  
Vol 25 (11) ◽  
pp. 1513-1513 ◽  
Author(s):  
Eric Daniel Głowacki ◽  
Mihai Irimia-Vladu ◽  
Martin Kaltenbrunner ◽  
Jacek Ga̧siorowski ◽  
Matthew S. White ◽  
...  
Keyword(s):  
Organic Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Stable Field ◽  
Hydrogen Bonded
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