Building layer-by-layer 3D supramolecular nanostructures at the terephthalic acid/stearic acid interface

2011 ◽  
Vol 47 (32) ◽  
pp. 9155 ◽  
Author(s):  
Yinli Li ◽  
Lei Liu ◽  
Ramesh Subramani ◽  
Yunxiang Pan ◽  
Bo Liu ◽  
...  
Keyword(s):  
Stearic Acid ◽  
Terephthalic Acid ◽  
Layer By Layer

scholarly journals Observing the three-dimensional terephthalic acid supramolecular growth mechanism on a stearic acid buffer layer by molecular simulation methods

RSC Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 1319-1330
Author(s):  
Chia-Hao Su ◽  
Hui-Lung Chen ◽  
Shih-Jye Sun ◽  
Shin-Pon Ju ◽  
Tsu-Hsun Hou ◽  
...  
Keyword(s):  
Phase Separation ◽  
Stearic Acid ◽  
Buffer Layer ◽  
Molecular Simulation ◽  
Growth Mechanism ◽  
Terephthalic Acid ◽  
Three Dimensional ◽  
Layer By Layer ◽  
Simulation Methods ◽  
Growth Mechanisms

The terephthalic acid (TPA) supramolecular growth mechanisms on the stearic acid (STA) buffer layer, such as the phase separation and layer-by-layer (LBL) mechanisms, were considered by molecular simulations.

Effect of stearic acid coating on anti-oxidation property of Sn-Ag-Cu solder powder

2019 ◽  
Vol 31 (1) ◽  
pp. 68-74 ◽  
Author(s):  
Fen Peng ◽  
Wensheng Liu ◽  
Yufeng Huang ◽  
Siwei Tang ◽  
Chaoping Liang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Stearic Acid ◽  
Photoelectron Spectroscopy ◽  
Hydroxyl Group ◽  
Phase Method ◽  
Layer By Layer ◽  
Content Type ◽  
Maximum Angle ◽  
Coated Powder

Purpose The purpose of this study is to develop a monolayer surface coating of stearic acid on Sn-Ag-Cu solder powder to limit oxidation. Design/methodology/approach Stearic acid was adsorbed onto Sn-Ag-Cu solder powder through liquid-phase adsorption. The isotherm of adsorption was measured and then the microstructure of coated powder was characterized by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. Findings The adsorption isotherm of stearic acid on the powder was “H” type, which revealed the layer-by-layer adsorption on non-porous surface. When the concentration of solution was in the range of 0.001-0.006 mol/L, with an adsorption amount of 0.12 ± 0.1 mg/g, monolayer stearic acid covered the solder powder completely. Uniform and integrated self-assembled monolayer coating was formed through hydrogen bonds between the oxygen ions in surface lattice of Sn3.0Ag0.5Cu solder powder and the —O—H hydroxyl group of stearic acid. The maximum angle of stability of coated powder also reduced by 2.87° compared with that of non-coated powder. The increase rate of oxygen content of coated powder was much slower than that of non-coated powder when they were exposed to humid air. Originality/value As a result, oxidation of fine solder powder was effectively limited. Essentially, this method can also be applied to the coating of other types of solder powder and has reference significance to other coating by liquid-phase method.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Compact back-scattered electrons' energy analyzer for standard SEM

1994 ◽  
Vol 52 ◽  
pp. 488-489
Author(s):  
S. Likharev ◽  
A. Kramarenko ◽  
V. Vybornov
Keyword(s):  
Depth Resolution ◽  
High Energy ◽  
Primary Beam ◽  
Layer By Layer ◽  
Energy Analyzer ◽  
High Energy Part ◽  
Small Window ◽  
Energy Part ◽  
Wide Range ◽  
High Voltage Supply

At present time the interest is growing considerably for theoretical and experimental analysis of back-scattered electrons (BSE) energy spectra. It was discovered that a special angle and energy nitration of BSE flow could be used for increasing a spatial resolution of BSE mode, sample topography investigations and for layer-by layer visualizing of a depth structure. In the last case it was shown theoretically that in order to obtain suitable depth resolution it is necessary to select a part of BSE flow with the directions of velocities close to inverse to the primary beam and energies within a small window in the high-energy part of the whole spectrum.A wide range of such devices has been developed earlier, but all of them have considerable demerit: they can hardly be used with a standard SEM due to the necessity of sufficient SEM modifications like installation of large accessories in or out SEM chamber, mounting of specialized detector systems, input wires for high voltage supply, screening a primary beam from additional electromagnetic field, etc. In this report we present a new scheme of a compact BSE energy analyzer that is free of imperfections mentioned above.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

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