Surface properties and thermal stability of SiO2-crystalline TiO2 nano-composites

2010 ◽  
Vol 20 (41) ◽  
pp. 9205 ◽  
Author(s):  
Magali Bonne ◽  
Stéphane Pronier ◽  
Yann Batonneau ◽  
Fabien Can ◽  
Xavier Courtois ◽  
...  
2016 ◽  
Vol 852 ◽  
pp. 480-484
Author(s):  
Yun Ran Zhang ◽  
Ming Ding ◽  
Zhi Shen Jiang ◽  
Luo Lan Ke ◽  
Ming Hua Li

In this paper, we have synthesized new functionalized Al2O3 nanoparticles successfully via reaction, which was grafted polyurethane onto the surface of nanoparticles dispersed in n-butyl acetate. The structure, surface properties, and thermal stability of the functionalized Al2O3 nanoparticles were characterized by means of by FT-IR, TGA and SEM. The results showed that the surface of Al2O3 nanoparticles has been grafted with polyurethane (PU). Furthermore, Al2O3 nanoparticles was dispersed evenly in the organic solvent, which can show a long suspension stability near to 6 months without precipitation, indicating that this product is very useful to prepare stabilized coating nanocomposites.


2010 ◽  
Vol 99 (3) ◽  
pp. 957-963 ◽  
Author(s):  
Emília Illeková ◽  
Helene Lefaix ◽  
Frederic Prima ◽  
Dušan Janičkovič ◽  
Peter Švec

2017 ◽  
Vol 900 ◽  
pp. 105-109
Author(s):  
Mustafa Taşyürek ◽  
Cihad Nazik

In this study, production and mechanical properties of the hybrid nanocomposite were investigated experimentally and estimated. Hybrid nanocomposites include boron carbide (B4C) and multi walled carbon nanotube (CNT) in the epoxy resin. B4C and CNT mixed into the epoxy with different percentages and produced. Tensile strength values of the produced samples was determined and compared. Thermal stability of the samples was analyzed by TGA. Samples are diversified by Taguchi method. The optimum sample was determined by comparison of the experimental and estimated results. Finally, the effects on each of the parameters were determined.


2002 ◽  
Vol 17 (5) ◽  
pp. 940-943 ◽  
Author(s):  
J.I. Hong ◽  
K. S. Cho ◽  
C. I. Chung ◽  
L. S. Schadler ◽  
R. W. Siegel

ZnO nanoparticles were mixed with branched low-density polyethylene and were found to increase the resistance of the polymer to thermal degradation without changing other thermal properties. Submicron-size ZnO particles were mixed with low-density polyethylene for comparison, and it was found that the increased thermal stability of the nanocomposite was due to the surface properties of nanoparticles smaller than approximately 100 nm in diameter.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

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