scholarly journals Morphological phase separation in unstable thin films: pattern formation and growth

2011 ◽  
Vol 13 (30) ◽  
pp. 13598 ◽  
Author(s):  
Prabhat K. Jaiswal ◽  
Manish Vashishtha ◽  
Sanjay Puri ◽  
Rajesh Khanna
1999 ◽  
Vol 112 ◽  
pp. 285-297 ◽  
Author(s):  
Jochen S. Gutmann ◽  
Peter Müller-Buschbaum ◽  
Manfred Stamm

2017 ◽  
Vol 96 (6) ◽  
Author(s):  
Avanish Kumar ◽  
Chaitanya Narayanam ◽  
Rajesh Khanna ◽  
Sanjay Puri

Kobunshi ◽  
1992 ◽  
Vol 41 (11) ◽  
pp. 790-793
Author(s):  
Hajime Tanaka

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
S. G. Altendorf ◽  
A. Efimenko ◽  
V. Oliana ◽  
H. Kierspel ◽  
A. D. Rata ◽  
...  
Keyword(s):  

2012 ◽  
Vol 3 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Matthias A. Ruderer ◽  
Robert Meier ◽  
Lionel Porcar ◽  
Robert Cubitt ◽  
Peter Müller-Buschbaum

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.


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