Enhanced open circuit voltage by hydrophilic ionic liquids as buffer layer in conjugated polymer–nanoporous titania hybrid solar cells

2010 ◽  
Vol 12 (46) ◽  
pp. 15309 ◽  
Author(s):  
Hyosung Choi ◽  
Heesook Cho ◽  
Suhee Song ◽  
Hongsuk Suh ◽  
Soojin Park ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Solar Cells ◽  
Buffer Layer ◽  
Conjugated Polymer ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Hybrid Solar Cells

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

scholarly journals Effect of ZnO:Al Thickness on the Open Circuit Voltage of Organic/a-Si:H Based Hybrid Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Chandra Bhal Singh ◽  
Vandana Singh ◽  
S. Bhattacharya ◽  
P. Balaji Bhargav ◽  
Nafis Ahmed
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Electron Acceptor ◽  
Open Circuit Voltage ◽  
Copper Phthalocyanine ◽  
Open Circuit ◽  
Inorganic Materials ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hybrid Solar Cells

Hybrid solar cells are based on the concept of using both organic and inorganic materials for fabrication of devices. Hybrid solar cells, based on a heterojunction between inorganic electron acceptor layer and organic donor layer, has been fabricated. Effect of electron transport layer on open circuit voltage (Voc) of hybrid solar cells was investigated. Hybrid solar cells were fabricated using amorphous silicon as main absorbing layer and as electron acceptor layer while using copper phthalocyanine (CuPc) as the donor materials. Al doped ZnO layer was used as buffer layer between ITO and a-Si:H to prevent ITO from reacting with silane gas during plasma enhanced chemical deposition (PECVD) process. ZnO:Al thin film also acts as electron transport layer. The open circuit voltage of hybrid solar cells studied with varying the thickness of ZnO:Al layer. Voc was increased from 0.30 volt to 0.52 volt with increasing the thickness of ZnO:Al layer from 15 nm to 45 nm. The poor interface between inorganic (a-Si:H) and organic layers may be a possible reason for low fill factor and low photocurrent in hybrid solar cells.

Effects of Carbon Grading at the p/i Interface on the Open Circuit Voltage of p-i-n and n-i-p Amophous Silicon Solar Cells

1987 ◽  
Vol 95 ◽  
Author(s):  
N. T. Tran ◽  
F. R. Jeffrey ◽  
D. J. Olsen
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Electron Tunneling ◽  
Open Circuit ◽  
Silicon Solar Cells

AbstractCarbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

CuGaSe2-Based Solar Cells with High Open Circuit Voltage

2007 ◽  
Vol 1012 ◽  
Author(s):  
Raquel Caballero ◽  
Susanne Siebentritt ◽  
Christian A. Kaufmann ◽  
Carola Kelch ◽  
Daniel Schweigert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Bath Temperature ◽  
Depletion Region ◽  
Open Circuit ◽  
Window Layer ◽  
Layer Deposition ◽  
Thiourea Concentration ◽  
P Type

AbstractThe objective of this work is to increase the open circuit voltage of CuGaSe2(CGS)-based solar cells without decreasing their efficiency. For that, the interface between the p-type CGS absorber and the n-type CdS/ZnO window layer is compared using three different recipes for the growth of the buffer layer. Results show the importance of the adaptation of the CdS buffer layer to the CuGaSe2 absorber film. A maximum open circuit voltage of 922 mV is achieved for the devices when using 60ºC as the chemical bath temperature and a low thiourea concentration. Drive-level capacitance profiling, external quantum efficiency and temperature dependent current-voltage measurements reveal a better quality of the CdS/CuGaSe2 interface for this buffer layer deposition conditions. Factors such as the larger depletion region width and the lower doping level, reducing the tunnelling component, are pointed out as responsible of the higher Voc.

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

2014 ◽  
Vol 26 (27) ◽  
pp. 4704-4710 ◽  
Author(s):  
Yun Seog Lee ◽  
Danny Chua ◽  
Riley E. Brandt ◽  
Sin Cheng Siah ◽  
Jian V. Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Cuprous Oxide ◽  
Gallium Oxide ◽  
Open Circuit Voltage ◽  
Atomic Layer ◽  
Open Circuit
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