Simulation and measurement of complete dye sensitised solar cells: including the influence of trapping, electrolyte, oxidised dyes and light intensity on steady state and transient device behaviour

2011 ◽  
Vol 13 (13) ◽  
pp. 5798 ◽  
Author(s):  
Piers R. F. Barnes ◽  
Assaf Y. Anderson ◽  
James R. Durrant ◽  
Brian C. O'Regan
1991 ◽  
Vol 219 ◽  
Author(s):  
David Redfield ◽  
Richard H. Bube

ABSTRACTLThe introduction of several new principles into the analysis of transition kinetics of metastable defects in a-Si:H has produced substantially improved rate equation for the density of defects as functions of time, light intensity, and temperature. The solution of this equation is stretched exponential (SE) having properties that explain in unifying way many observations of defect properties, including generation and anneal of the defect density in homogeneous films and degradation and anneal of solar cells. Major consequences are found for both the steady-state and transient properties of the defect density and for interpretations of microscopic models of the defects. These properties are also shown to be analogous to those of metastable centers in other materials, particularly the metastable DX center in AlGaAs which offers rare insight into the microscopic origins of stretched exponentials that can be applied to a-Si:H in ways that provide new perspectives on effects of alloying and hydrogen on stability.


2006 ◽  
Vol 420 (4-6) ◽  
pp. 309-315 ◽  
Author(s):  
Xiao-Feng Wang ◽  
Yasushi Koyama ◽  
Hiroyoshi Nagae ◽  
Yumiko Yamano ◽  
Masayoshi Ito ◽  
...  
Keyword(s):  

ACS Nano ◽  
2014 ◽  
Vol 8 (12) ◽  
pp. 12814-12825 ◽  
Author(s):  
Jianbo Gao ◽  
Jianbing Zhang ◽  
Jao van de Lagemaat ◽  
Justin C. Johnson ◽  
Matthew C. Beard

2019 ◽  
Vol 124 (1) ◽  
pp. 219-229 ◽  
Author(s):  
Nandi Wu ◽  
Daniel Walter ◽  
Andreas Fell ◽  
Yiliang Wu ◽  
Klaus Weber

2016 ◽  
Vol 4 (21) ◽  
pp. 8374-8383 ◽  
Author(s):  
Liangbin Xiong ◽  
Minchao Qin ◽  
Guang Yang ◽  
Yaxiong Guo ◽  
Hongwei Lei ◽  
...  

Mg doping improves interfacial contact and endows low hysteresis high temperature processed SnO2-based PSCs with a steady-state PCE of 14.55%.


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