Low temperature thermal evaporation growth of aligned ZnO nanorods on ZnO film: a growth mechanism promoted by Zn nanoclusters on polar surfaces

CrystEngComm ◽  
2011 ◽  
Vol 13 (5) ◽  
pp. 1707-1712 ◽  
Author(s):  
D. Calestani ◽  
M. Z. Zha ◽  
L. Zanotti ◽  
M. Villani ◽  
A. Zappettini
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Zno Nanorods ◽  
Zno Film ◽  
Polar Surfaces

Growth and microstructural characterization of catalyst-free ZnO nanostructures grown on sapphire and GaN by thermal evaporation

2007 ◽  
Vol 22 (4) ◽  
pp. 937-942 ◽  
Author(s):  
Bo Hyun Kong ◽  
Hyung Koun Cho
Keyword(s):  
Electron Microscopy ◽  
Thermal Evaporation ◽  
Lattice Mismatch ◽  
Zno Nanorods ◽  
Microstructural Characterization ◽  
Zno Nanostructures ◽  
Zno Film ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Relationship Of

ZnO nanostructures were grown directly on sapphire substrates and GaN epilayers by thermal evaporation. Their morphologies and densities were found to be strongly dependent on the synthesis position and the kinds of substrate loaded into the reactor due to the different oxygen densities and the lattice mismatch, respectively. Scanning electron microscopy and transmission electron microscopy studies revealed that ZnO nanorods on sapphire substrates grew in four directions, one 〈0001〉Sapphire and three (1014)Sapphire directions. It was found that the in-plane lattice mismatch of inclined ZnO nanorods was remarkably reduced by forming the planar relationship of (0002)ZnO//(1014)Sapphire, compared to that of (1120)ZnO//(1010)Sapphire in the ZnO film. On the other hand, for the GaN epilayers, vertically well-aligned ZnO nanorods were grown after growing an epitaxial ZnO film due to reduced lattice mismatch. Electron energy-loss spectroscopy data showed that Zn-rich stoichiometry was responsible for the formation of ZnO nanostructures.

Microcosmic Growth Process of ZnO Microrods

2008 ◽  
Vol 47-50 ◽  
pp. 1055-1058
Author(s):  
Wei Wei Wang ◽  
Li Ping Zhu ◽  
Zhi Zhen Ye ◽  
Jing Rui Wang ◽  
Ye Feng Yang ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Growth Process ◽  
Thermal Evaporation ◽  
Zno Nanorods ◽  
Electronic Microscopy ◽  
Epitaxial Relationship ◽  
Sem Images ◽  
Transmission Electronic Microscopy

ZnO microrods were synthesized on Si (111) sustrate by thermal evaporation at the temperature of 700 °C. Different growth environments bring to the different morphologies of the depositions. By analyzing the scanning electrical microscopy (SEM) images, a growth mechanism of the microrods is schematically put forward. Transmission electronic microscopy (TEM) images show that the perfectly epitaxial relationship between the ZnO nanorods and microrods.

Fabrication and Growth Mechanism of Zn1-xCdxO Nanotubes by Thermal Evaporation Method

2009 ◽  
Vol 24 (5) ◽  
pp. 998-1002
Author(s):  
Bo LIU ◽  
Fa-Zhan WANG ◽  
Gu-Zhong ZHANG ◽  
Chao ZHAO ◽  
Si-Cong YUAN
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

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