Temperature dependence on the charge transport behaviour of 3-D superlattice crystals of mercaptosuccinic acid-protected gold nanoparticles

2009 ◽  
Vol 11 (41) ◽  
pp. 9346 ◽  
Author(s):  
A. Sreekumaran Nair ◽  
Keisaku Kimura
Keyword(s):  
Gold Nanoparticles ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Mercaptosuccinic Acid ◽  
Transport Behaviour

Deciphering the Multifarious Charge‐Transport Behaviour of Crystalline Propeller‐Shaped Triphenylamine Analogues

2019 ◽  
Vol 25 (8) ◽  
pp. 1992-2002 ◽  
Author(s):  
R. V. Ambili ◽  
Devika Sasikumar ◽  
P. Hridya ◽  
Mahesh Hariharan
Keyword(s):  
Charge Transport ◽  
Transport Behaviour

Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors

2016 ◽  
Vol 617 ◽  
pp. 114-119
Author(s):  
Abhishek Singh Dahiya ◽  
Charles Opoku ◽  
Frederic Cayrel ◽  
Damien Valente ◽  
Guylaine Poulin-Vittrant ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Charge Transport ◽  
Temperature Dependence

Temperature Dependence of Charge Transport in Polythiophene-Based Field-Effect Transistors

2010 ◽  
Author(s):  
M. Yoshikawa ◽  
T. Banno ◽  
T. Nagase ◽  
T. Kobayashi ◽  
S. Murakami ◽  
...  
Keyword(s):  
Charge Transport ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistors

Self-Assembly of Gold Nanoparticles on Gallium Droplets: Controlling Charge Transport through Microscopic Devices

Langmuir ◽  
2013 ◽  
Vol 29 (44) ◽  
pp. 13640-13646 ◽  
Author(s):  
Kan Du ◽  
Elizabeth Glogowski ◽  
Mark T. Tuominen ◽  
Todd Emrick ◽  
Thomas P. Russell ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Charge Transport ◽  
Self Assembly

Temperature Dependence of the Electrical Transport of Carbon Doped Gan

1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel
Keyword(s):  
Activation Energy ◽  
Charge Transport ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Effective Activation Energy ◽  
Impurity Band ◽  
Hall Voltage ◽  
Effective Activation ◽  
Carbon Doped ◽  
P Type

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

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