Designing tridentate ligands for ruthenium(ii) complexes with prolonged room temperature luminescence lifetimes

2005 ◽  
Vol 34 (2) ◽  
pp. 133 ◽  
Author(s):  
Elaine A. Medlycott ◽  
Garry S. Hanan
Keyword(s):  
Room Temperature ◽  
Tridentate Ligands ◽  
Room Temperature Luminescence

A Strategy for Improving the Room-Temperature Luminescence Properties of Ru(II) Complexes with Tridentate Ligands

2002 ◽  
Vol 124 (27) ◽  
pp. 7912-7913 ◽  
Author(s):  
Yuan-Qing Fang ◽  
Nicholas J. Taylor ◽  
Garry S. Hanan ◽  
Frédérique Loiseau ◽  
Rosalba Passalacqua ◽  
...  
Keyword(s):  
Room Temperature ◽  
Luminescence Properties ◽  
Tridentate Ligands ◽  
Room Temperature Luminescence

Room-Temperature Luminescence of a Variety of Compounds on 1% α-Cyclodextrin/NaCl Mixture

1989 ◽  
Vol 43 (5) ◽  
pp. 810-812 ◽  
Author(s):  
Marsha D. Richmond ◽  
Robert J. Hurtubise
Keyword(s):  
Solid Surface ◽  
Room Temperature ◽  
Lower Cost ◽  
Model Compounds ◽  
Figures Of Merit ◽  
Room Temperature Luminescence ◽  
Analytical Figures Of Merit

With the use of model compounds of widely different functionality, it was found that a 1% α-cyclodextrin/NaCl mixture could be used in place of an 80% α-cyclodextrin/NaCl mixture to obtain solid surface room-temperature fluorescence (RTF) and phosphorescence (RTP) data. Analytical figures of merit are reported for four compounds. The use of a smaller percentage of α-cyclodextrin results in lower cost; no loss of analytical integrity, compared with that for an 80% α-cyclodextrin/NaCl mixture; and easier handling of the α-cyclodextrin/NaCl mixtures.

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3μm

2003 ◽  
Vol 34 (5-8) ◽  
pp. 631-633 ◽  
Author(s):  
M.J. da Silva ◽  
S. Martini ◽  
T.E. Lamas ◽  
A.A. Quivy ◽  
E.C.F. da Silva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Room Temperature ◽  
Room Temperature Luminescence

Study of the Radiative and Non-Radiative Recombination Processes at Dislocations in Silicon by Photoluminescence and LBIC Measurements

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
M. Acciarri ◽  
M. Casati
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Light Emission ◽  
Energy Levels ◽  
The Third ◽  
Optical Telecommunications ◽  
Recombination Processes ◽  
Metallic Impurities ◽  
Room Temperature Luminescence ◽  
Dislocation Related Luminescence

AbstractIt is well known that the sharp, room temperature luminescence emission at 1.54 μm from dislocated silicon has set off a great interest for this material in view of its applications in the third window of optical telecommunications. For this reason the dislocation related luminescence in silicon addressed recently a number of investigation aimed at understanding the mechanism of light emission. The problem is still unsolved as most of the experiments done gave contradictory answers to the main questions open, which concern the intrinsic or extrinsic nature of dislocation luminescence and the effect on it of reconstruction, interaction or passivation processes, possibly assisted by metallic or non-metallic impurities.In order to go more insight on the problem, we started a systematic work on CZ silicon, aimed at understanding the properties of dislocation luminescence. The identification of the energy levels involved in the different dislocation PL bands has been obtained.

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