Conductive thin films of θ-(BETS)4[Fe(CN)5NO] on silicon electrodes – new perspectives on charge transfer salts

2004 ◽  
Vol 28 (1) ◽  
pp. 52-55 ◽  
Author(s):  
Luca Pilia ◽  
Isabelle Malfant ◽  
Dominique de Caro ◽  
François Senocq ◽  
Antoine Zwick ◽  
...  
2020 ◽  
Vol 2 (11) ◽  
pp. 5171-5180
Author(s):  
Tyler H. Bennett ◽  
Ravi Pamu ◽  
Guang Yang ◽  
Dibyendu Mukherjee ◽  
Bamin Khomami

The photosynthetic protein complex Photosystem I has been incorporated into the metal organic framework ZIF-8 and then reacted with TCNQ to form a conductive charge transfer salt, generating significant photocurrent from a biohybrid photoactive film.


RSC Advances ◽  
2015 ◽  
Vol 5 (50) ◽  
pp. 40205-40218 ◽  
Author(s):  
Qiang Wang ◽  
Matteo Zecchini ◽  
John D. Wallis ◽  
Yiliang Wu ◽  
Jeremy M. Rawson ◽  
...  

Synthetic routes to three novel OH-functionalized BEDT-TTF donorsH1–H3are presented. Charge transfer salts ofH1and2and polystyrene blend thin films ofH3have been studied after doping with iodine.


2003 ◽  
Vol 137 (1-3) ◽  
pp. 1201-1202 ◽  
Author(s):  
H.Hau Wang ◽  
Catherine Y. Han ◽  
Dong-Youn Noh ◽  
Kyong-Soon Shin ◽  
Gerold A. Willing ◽  
...  

1991 ◽  
Vol 1 (9) ◽  
pp. 1347-1354 ◽  
Author(s):  
D. Schmeißer ◽  
A. Gonzales ◽  
J. U. von Schütz ◽  
H. Wachtel ◽  
H. C. Wolf

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.


2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui

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