p-Type electronic conductivity, oxygen permeability and stability of La2Ni0.9Co0.1O4+δElectronic supplementary infromation (ESI) available: further experimental data for the oxygen permeability, total conductivity and Seebeck coefficient of La2Ni0.9Co0.1O4+δ. See http://www.rsc.org/suppdata/jm/b3/b300357d/

2003 ◽  
Vol 13 (5) ◽  
pp. 1136-1144 ◽  
Author(s):  
Aleksey A. Yaremchenko ◽  
Vladislav V. Kharton ◽  
Mikhail V. Patrakeev ◽  
Jorge R. Frade
Keyword(s):  
Experimental Data ◽  
Seebeck Coefficient ◽  
Oxygen Permeability ◽  
Electronic Conductivity ◽  
Total Conductivity ◽  
P Type

scholarly journals Thermoelectric Behavior of BaZr0.9Y0.1O3−d Proton Conducting Electrolyte

Membranes ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 120 ◽  
Author(s):  
Tsvetkov ◽  
Ivanov ◽  
Malyshkin ◽  
Sereda ◽  
Zuev
Keyword(s):  
Activation Energy ◽  
Seebeck Coefficient ◽  
Small Polaron ◽  
Transference Numbers ◽  
Total Conductivity ◽  
Clear Understanding ◽  
Proton Conducting ◽  
Total Electrical Conductivity ◽  
P Type ◽  
Electronic Defects

BaZr0.9Y0.1O3-δ (BZY10), a promising proton conducting material, exhibits p-type conduction under oxidative conditions. Holes in BZY10 are of the small polaron type. However, there is no clear understanding at which places in the lattice they are localized. The main objectives of this work were, therefore, to discuss the nature of electronic defects in BZY10 on the basis of the combined measurements of the thermo-EMF and conductivity. Total electrical conductivity and Seebeck coefficient of BZY10 were simultaneously studied depending on partial pressures of oxygen (pO2), water (pH2O) and temperature (T). The model equation for total conductivity and Seebeck coefficient derived on the basis of the proposed defect chemical approach was successfully fitted to the experimental data. Transference numbers of all the charge carriers in BZY10 were calculated. The heat of transport of oxide ions was found to be about one half the activation energy of their mobility, while that of protons was almost equal to the activation energy of their mobility. The results of the Seebeck coefficient modeling indicate that cation impurities, rather than oxygen sites, should be considered as a place of hole localization.

scholarly journals Влияние углеродных нанотрубок на термоэлектрические свойства сплавов Гейслера p- и n-типа

2022 ◽  
Vol 56 (2) ◽  
pp. 164
Author(s):  
E.M. Elsehly ◽  
A. El-Khouly ◽  
Mohamed Asran Hassan ◽  
А.П. Новицкий ◽  
Д.Ю. Карпенков ◽  
...  
Keyword(s):  
Experimental Data ◽  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Heusler Alloy ◽  
Heusler Alloys ◽  
Type Compound ◽  
P Type

This paper presents the results of studying the effect of carbon nanotubes on thermoelectric properties of p-type (Nb0.6Ta0.4)0.8Ti0.2FeSb and n-type Ti0.5Zr0.25Hf0.25NiSn half Heusler alloys. The experimental data obtained indicate a strong effect of the carbon nanotubes on electrical conductivity and Seebeck coefficient of the n-type compound, while the changes in these properties in the p-type compound were significantly less. It is suggested that a possible reason for this difference is the formation of a conducting cluster of carbon nanotubes in the sample of the n-type Heusler alloy.

New Mixed Conductors Based on Doped Layered Perovskites

1998 ◽  
Vol 548 ◽  
Author(s):  
Carlos Navas ◽  
Harry L. Tuller ◽  
Hans-Conrad zur Loye
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electronic Conductivity ◽  
Total Conductivity ◽  
Mixed Conductors ◽  
Type Conductivity ◽  
P Type ◽  
Layered Perovskites

ABSTRACTA series of doped Ruddlesden-Popper phases, of general formula Sr3Ti2−xMxO7−δ (M=Al, Ga, Co), were synthesized and their electrical conductivity characterized as a function of temperature and oxygen partial pressure. For fixed-valent dopants, p-type conductivity predominates at p(O2)>10−5 atm, followed by a p(O2)-independent electrolytic regime, and n-type electronic conductivity at very low p(O2). The electrolytic regime exhibits activation energies in the range 1.7-1.8 eV. Doping with transition metals such as Co results in a very significant increase in total conductivity with a p-type conductivity at high p(O2). Furthermore, an apparent ionic regime at intermediate p(O2) is observed, characterized by high conductivity (>10−2 S/cm at 700 °C) and low activation energy (0.7 eV). This interpretation is consistent with iodometric measurements as interpreted by a defect chemical model. Other measurements are in progress to confirm this conclusion.

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

HPHT synthesis and enhanced TE performance of Te and Sn/Se elements binary-doped CoSb3

2019 ◽  
Vol 12 (01) ◽  
pp. 1850105 ◽  
Author(s):  
Hairui Sun ◽  
Pin Lv ◽  
Chao Wang ◽  
Yunxian Liu ◽  
Xiaopeng Jia ◽  
...  
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
High Pressure ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Grain Boundaries ◽  
Preparation Methods ◽  
Synthesis Time ◽  
Lattice Disorder ◽  
Positive Effect

A series of binary-doped CoSb3 with Te and Se/Sn bulk compounds Co4Sb[Formula: see text]TexSny/Sey ([Formula: see text] and 0.6, [Formula: see text] and 0.3), have been successfully prepared via a simple high pressure and high-temperature (HPHT) method. And, the influence of the doping elements on the microstructure of the samples synthesized under diverse pressures and the corresponding TE performance were studied in detail. Comparing with other preparation methods, the synthesis time of HPHT was acutely shortened. The obtained samples contain more grain boundaries, lattice disorder, dislocations and the possible “nanodot”, which have positive effect on reducing thermal conductivity. The experimental data indicate that the absolute values of Seebeck coefficient increases with pressure. What’s more, the thermal conductivities show a monotone decreasing trend as the synthesis pressure rises. The minimum value obtained is 1.93[Formula: see text]Wm[Formula: see text]K[Formula: see text] at normal temperature for Co4Sb[Formula: see text]Te[Formula: see text]Se[Formula: see text] prepared under 3[Formula: see text]GPa.

scholarly journals Effect of Microwave Processing and Glass Inclusions on Thermoelectric Properties of P-Type Bismuth Antimony Telluride Alloys for Wearable Applications

Energies ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 4524
Author(s):  
Amin Nozariasbmarz ◽  
Daryoosh Vashaee
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Room Temperature ◽  
Electronic Devices ◽  
Microwave Processing ◽  
Glass Inclusion ◽  
Wearable Electronic ◽  
P Type ◽  
Wearable Electronic Devices ◽  
Body Heat

Depending on the application of bismuth telluride thermoelectric materials in cooling, waste heat recovery, or wearable electronics, their material properties, and geometrical dimensions should be designed to optimize their performance. Recently, thermoelectric materials have gained a lot of interest in wearable electronic devices for body heat harvesting and cooling purposes. For efficient wearable electronic devices, thermoelectric materials with optimum properties, i.e., low thermal conductivity, high Seebeck coefficient, and high thermoelectric figure-of-merit (zT) at room temperature, are demanded. In this paper, we investigate the effect of glass inclusion, microwave processing, and annealing on the synthesis of high-performance p-type (BixSb1−x)2Te3 nanocomposites, optimized specially for body heat harvesting and body cooling applications. Our results show that glass inclusion could enhance the room temperature Seebeck coefficient by more than 10% while maintaining zT the same. Moreover, the combination of microwave radiation and post-annealing enables a 25% enhancement of zT at room temperature. A thermoelectric generator wristband, made of the developed materials, generates 300 μW power and 323 mV voltage when connected to the human body. Consequently, MW processing provides a new and effective way of synthesizing p-type (BixSb1−x)2Te3 alloys with optimum transport properties.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

Improvement on Thermoelectric Characteristics of Layered Nanostructure by Ion Beam Bombardment

2006 ◽  
Vol 929 ◽  
Author(s):  
Bangke Zheng ◽  
S. Budak ◽  
C. Muntele ◽  
Z. Xiao ◽  
S. Celaschi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Electric Conductivity ◽  
Ion Beam ◽  
Thermo Electric ◽  
Super Lattice ◽  
Before And After ◽  
The Cross ◽  
Nano Cluster ◽  
P Type

ABSTRACTWe made p-type nanoscale super lattice thermoelectric cooling devices which consist of multiple periodic layers of Si1−x Gex / Si, The thickness of each layer ranges between 10 and 50 nm. The super lattice was bombarded by 5 MeV Si ion with different fluencies aiming to form nano-cluster quantum dot structures. We estimated the thermo-electric efficiency of the so fabricated devices, measuring the thin film cross plane thermal conductivity by the 3rd harmonic method, measuring the cross plane Seebeck coefficient, and finally measuring the cross plane electric conductivity before and after ion bombardment. As predicted, the thermo-electric Figure of Merit of the films increases with increasing Si ion fluencies. In addition to the effect of quantum well confinement of the phonon transmission, the nano-scale crystal quantum dots produced by the incident Si beam further adversely affects the thermal conductivity by absorbing and dissipating phonon along the lattice, and therefore further reduces the cross plane thermal conductivity, This process increases the electron density of state therefore increasing Seebeck coefficient, and the electric conductivity.

Ceramic composite membranes based on Bi3Ru3O11 – Bi1,6Er0,4O3 for obtaining of oxygen

2021 ◽  
Vol 6 ◽  
pp. 22-28
Author(s):  
P. E. Dergacheva ◽  
◽  
I. V. Kulbakin ◽  
S. V. Fedorov ◽  
A. S. Lysenkov ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Ceramic Composite ◽  
Oxygen Permeability ◽  
Total Porosity ◽  
Composite Membranes ◽  
Ceramic Composites ◽  
Argon Atmosphere ◽  
Pure Oxygen ◽  
Total Conductivity ◽  
Temperature Dependence Of Conductivity

Using hot uniaxial pressing in an argon atmosphere with a stress of 35 MPa and with a holding at 800 °C for 1 hour, ceramic composites of Bi3Ru3O11 – 50, 65 wt % Bi1,6Er0,4O3 were obtained. It was found that phase composition of the composites does not change during gas chromatographic testing at 800 °C and well corresponds to the specified one. Microstructure of the obtained composites was tested and the formation of dense composites with a total porosity of less than 1% and with a uniform distribution of the Bi3Ru3O11 and Bi1,6Er0,4O3 components in bulk of material was demonstrated. Transport properties (total conductivity, oxygen fluxes and selectivity of separating oxygen over nitrogen) of the obtained composites at 600 – 800 °C had been investigated. Thus, at 800 °C the electrical conductivity of Bi3Ru3O11 – 50, 65 wt % Bi1,6Er0,4O3 was about 200 and 50 Ohm–1∙cm–1, respectively, while the metallic nature of their temperature dependence of conductivity is correlated to that for the Bi3Ru3O11. The value of oxygen permeability for the obtained ceramic composites of about 7∙10–9 mol·cm–1·s–1 at 800 °C, which is compared to other membrane materials based on bismuth oxide, demonstrated the potential of their further use in the tasks for obtaining of pure oxygen from air.

Sign in / Sign up

Export Citation Format

Share Document