Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CETa(CH2CMe3)3 (E = CH, N)Electronic supplementary information (ESI) available: AFM and SEM images of TaC and TaCN films deposited on Si(100) at 773, 823 and 923 K. See http://www.rsc.org/suppdata/jm/b2/b208129f/

2002 ◽  
Vol 13 (2) ◽  
pp. 365-369 ◽  
Author(s):  
Yu-Hsu Chang ◽  
Jin-Bao Wu ◽  
Pei-Ju Chang ◽  
Hsin-Tien Chiu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tantalum Carbide ◽  
Supplementary Information ◽  
Sem Images ◽  
Electronic Supplementary Information

Iron Sulfide (FeS2) Thin Films From Single-Source Precursors by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O'Brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Iron Sulfide ◽  
Chemical Vapor ◽  
Analytical Techniques ◽  
Single Source ◽  
Sem Images ◽  
Organic Precursor ◽  
Single Source Precursors

AbstractDialkyl (or mixed alkyl)-dithiocarbamato iron(III) complexes have been used for the deposition of iron sulfide thin films using chemical vapor deposition techniques. The single-source precursors used in this work have been prepared by the reaction of FeCl3with dialkyldithiocarbamate sodium salts and characterized by a number of analytical techniques. Good quality thin films of FeS2 have been prepared from the single-source metal organic precursor, [Fe(S2CNMeiPr)3], by AACVD. XRD patterns of the films indicated crystalline iron sulfide (FeS2) grown at between 375 – 450 °C. SEM images show the films to have reasonable morphology and to be crystalline.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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