Transformations of low-dimensional zinc phosphates to complex open-framework structures. Part 1: zero-dimensional to one-, two- and three-dimensional structures

2001 ◽  
Vol 11 (4) ◽  
pp. 1181-1191 ◽  
Author(s):  
Ayi A. Ayi ◽  
Amitava Choudhury ◽  
Srinivasan Natarajan ◽  
S. Neeraj ◽  
C. N. R. Rao
ChemInform ◽  
2001 ◽  
Vol 32 (1) ◽  
pp. no-no
Author(s):  
Amitava Choudhury ◽  
Srinivasan Natarajan ◽  
C. N. R. Rao

2000 ◽  
Vol 39 (19) ◽  
pp. 4295-4304 ◽  
Author(s):  
Amitava Choudhury ◽  
Srinivasan Natarajan ◽  
C. N. R. Rao

2015 ◽  
Vol 71 (4) ◽  
pp. 330-337 ◽  
Author(s):  
Sabina Kovač ◽  
Ljiljana Karanović ◽  
Tamara Đorđević

Two isostructural diarsenates, SrZnAs2O7(strontium zinc diarsenate), (I), and BaCuAs2O7[barium copper(II) diarsenate], (II), have been synthesized under hydrothermal conditions and characterized by single-crystal X-ray diffraction. The three-dimensional open-framework crystal structure consists of corner-sharingM2O5(M2 = Zn or Cu) square pyramids and diarsenate (As2O7) groups. Each As2O7group shares its five corners with five differentM2O5square pyramids. The resulting framework delimits two types of tunnels aligned parallel to the [010] and [100] directions where the large divalent nine-coordinatedM1 (M1 = Sr or Ba) cations are located. The geometrical characteristics of theM1O9,M2O5and As2O7groups of known isostructural diarsenates, adopting the general formulaM1IIM2IIAs2O7(M1II= Sr, Ba, Pb;M2II= Mg, Co, Cu, Zn) and crystallizing in the space groupP21/n, are presented and discussed.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Jing-Wei Yu ◽  
Hai-Jiao Yu ◽  
Zhi-Yuan Yao ◽  
Zi-Han Li ◽  
Qiu Ren ◽  
...  

A water stable proton-conducting material (NH4)5[Zr3(OH)3F6(PO4)2(HPO4) (ZrP) was hydrothermally synthesized. The three-dimensional (3D) framework of ZrP is composed of ZrF2O4 octahedra and HxPO4 phosphate units and forming 18-ring channels through...


1994 ◽  
Vol 340 ◽  
Author(s):  
L. E. Rumaner ◽  
F.S. Ohuchi

ABSTRACTAlthough heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.


2002 ◽  
Vol 12 (4) ◽  
pp. 1044-1052 ◽  
Author(s):  
Amitava Choudhury ◽  
S. Neeraj ◽  
Srinivasan Natarajan ◽  
C. N. R. Rao

2013 ◽  
Vol 125 (42) ◽  
pp. 11289-11293 ◽  
Author(s):  
Young-Si Jun ◽  
Jihee Park ◽  
Sun Uk Lee ◽  
Arne Thomas ◽  
Won Hi Hong ◽  
...  

2004 ◽  
Vol 7 (2) ◽  
pp. 216-219 ◽  
Author(s):  
Li-Mei Duan ◽  
Ji-Qing Xu ◽  
Feng-Tong Xie ◽  
Ya-Bing Liu ◽  
Hong Ding

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