Growth of ZnO thin films exhibiting room-temperature ultraviolet emission by means of atmospheric pressure vapor-phase epitaxy

2001 ◽  
Vol 11 (2) ◽  
pp. 262-263 ◽  
Author(s):  
Kouji Omichi ◽  
Kazuhiko Kaiya ◽  
Naoyuki Takahashi ◽  
Takato Nakamura ◽  
Shinji Okamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films ◽  
Ultraviolet Emission

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

2014 ◽  
Vol 115 (11) ◽  
pp. 113508 ◽  
Author(s):  
Stéphane Brochen ◽  
Matthieu Lafossas ◽  
Ivan-Christophe Robin ◽  
Pierre Ferret ◽  
Frédérique Gemain ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films ◽  
Organic Vapor ◽  
Metal Organic

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

2003 ◽  
Vol 257 (3-4) ◽  
pp. 255-262 ◽  
Author(s):  
T.P. Smith ◽  
W.J. Mecouch ◽  
P.Q. Miraglia ◽  
A.M. Roskowski ◽  
P.J. Hartlieb ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films

Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy

2004 ◽  
Vol 95 (11) ◽  
pp. 6268-6272 ◽  
Author(s):  
Y. Ma ◽  
G. T. Du ◽  
S. R. Yang ◽  
Z. T. Li ◽  
B. J. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films ◽  
Conductivity Type

scholarly journals The Formation of in-rich Regions at The Perphery of The Inverted Hexahonal Pits of InGaN thin-films Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 675-681
Author(s):  
P. Li ◽  
S. J. Chua ◽  
M. Hao ◽  
W. Wang ◽  
X. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Sem Images ◽  
Scanning Electron

InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

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