Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

2014 ◽  
Vol 115 (11) ◽  
pp. 113508 ◽  
Author(s):  
Stéphane Brochen ◽  
Matthieu Lafossas ◽  
Ivan-Christophe Robin ◽  
Pierre Ferret ◽  
Frédérique Gemain ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

2007 ◽  
Vol 91 (7) ◽  
pp. 071120 ◽  
Author(s):  
D. J. Rogers ◽  
F. Hosseini Teherani ◽  
A. Ougazzaden ◽  
S. Gautier ◽  
L. Divay ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films ◽  
Organic Vapor ◽  
Metal Organic ◽  
Lift Off

Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy

2009 ◽  
Vol 6 (S2) ◽  
pp. S1029-S1032 ◽  
Author(s):  
T. Baghdadli ◽  
S. Ould Saad Hamady ◽  
S. Gautier ◽  
T. Moudakir ◽  
B. Benyoucef ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Structural Characterizations

Structural characterization of a-plane Zn1−xCdxO (0⩽x⩽0.085) thin films grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 99 (2) ◽  
pp. 023514 ◽  
Author(s):  
J. Zúñiga-Pérez ◽  
V. Muñoz-Sanjosé ◽  
M. Lorenz ◽  
G. Benndorf ◽  
S. Heitsch ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Structural Characterization ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aykut Baki ◽  
Julian Stöver ◽  
Tobias Schulz ◽  
Toni Markurt ◽  
Houari Amari ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Vapor Phase ◽  
Oxygen Deficiency ◽  
Vapor Phase Epitaxy ◽  
Oxide Semiconductor ◽  
Switching Behavior ◽  
Extended Defect ◽  
Organic Vapor ◽  
Metal Organic

AbstractHomoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE). Exploiting the advantage of adjusting the partial pressures of the individual constituents independently, we tuned the Sr/Ti ratio of the gas phase for realizing, stoichiometric, as well as Sr deficient layers. Quantitative energy dispersive X-ray spectroscopy in a scanning transmission electron microscope confirm Sr deficiency of up to 20% in nominally off-stoichiometrically grown films. Our MOVPE process allows to grow such layers in phase pure state and without extended defect formation. Indications for oxygen deficiency could not be identified. Sr deficient layers exhibit an increased permittivity of ɛr = 202 and a larger vertical lattice parameter. Current–voltage characteristics (IVCs) of metal–oxide–semiconductor (Pt/SrTiO3/SrTiO3:Nb) structures reveal that Sr deficient SrTiO3 films show an intrinsic resistive switching with on–off ratios of three orders of magnitude at RT and seven orders of magnitude at 10 K. There is strong evidence that a large deviation from stoichiometry pronounces the resistive switching behavior. IVCs conducted at 10 K indicate a defect-based mechanism instead of mass transport by ion diffusion. This is supported by in-situ STEM investigations that show filaments to form at significant higher voltages than those were resistive switching is observed in our samples.

Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

2019 ◽  
Vol 125 (19) ◽  
pp. 195702 ◽  
Author(s):  
S. Bin Anooz ◽  
A. Popp ◽  
R. Grüneberg ◽  
C. Wouters ◽  
R. Schewski ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Metal organic vapor phase epitaxy of $$\hbox {Ge}_{1}\hbox {Sb}_{2}\hbox {Te}_{4}$$Ge1Sb2Te4 thin films on Si(111) substrate

2019 ◽  
Vol 125 (3) ◽  
Author(s):  
Albert Ratajczak ◽  
Martina von der Ahe ◽  
Hongchu Du ◽  
Gregor Mussler ◽  
Detlev Grützmacher
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In,Ga)Se[sub 2] thin films on GaAs

2006 ◽  
Vol 100 (11) ◽  
pp. 114915 ◽  
Author(s):  
C. H. Lei ◽  
A. A. Rockett ◽  
I. M. Robertson ◽  
N. Papathanasiou ◽  
S. Siebentritt
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Interface Reactions ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kirkendall Voids

scholarly journals High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

2013 ◽  
Vol 113 (5) ◽  
pp. 053514 ◽  
Author(s):  
R. Oliva ◽  
J. Ibáñez ◽  
L. Artús ◽  
R. Cuscó ◽  
J. Zúñiga-Pérez ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Raman Scattering ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cdo Thin Films
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