Study of chemical vapor deposition reaction between tungsten hexafluoride and silicon difluoride

1999 ◽  
Vol 9 (10) ◽  
pp. 2445-2448 ◽  
Author(s):  
Chi‐Young Lee ◽  
Wen‐Chung Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Hexafluoride ◽  
Chemical Vapor Deposition Reaction

Selective Chemical Vapor Deposition of Tungsten Films on Titanium—Ion—Irradiated Silicon Dioxide

1989 ◽  
Vol 158 ◽  
Author(s):  
H. Okuhira ◽  
S. Nishimatsu ◽  
K. Ninomiya
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Film Deposition ◽  
Tungsten Hexafluoride ◽  
Laser Cvd ◽  
193 Nm

ABSTRACTSelective area depositon of adherent tungsten (W) film on titanium (Ti)—ion—irradiated silicon dioxide (SiOz) is achieved. First, Ti—ion irradiation through a stencil mask is performed at 600 eV for 1.1 X 1016 atoms/cm2 in a reaction chamber. Next, ArF excimer laser (λ = 193 nm) chemical vapor deposition (CVD) with tungsten hexafluoride (WFs) and hydrogen (H2) is carried out for 40 seconds at 400 K. Finally, low—pressure (LP) CVD is carried out at 600 K and then W films are deposited selectively on the ion—irradiated SiO2 Without the laser CVD step, the ion—irradiation pattern disappears during LPCVD and no W film deposition occurs. Therefore, laser CVD is essential in our experiments.

Characterization of Tungsten Nucleation Layers Deposited Using Various Sih4 and Wf6 Flows

1994 ◽  
Vol 337 ◽  
Author(s):  
V.V.S. Rana ◽  
M. Eizenberg ◽  
S. Ghanayem ◽  
J. Roberts ◽  
A.K. Sinha
Keyword(s):  
Chemical Vapor Deposition ◽  
Bulk Density ◽  
Deposition Rate ◽  
Incubation Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pure Tungsten ◽  
Tungsten Hexafluoride ◽  
Step Coverage

ABSTRACTChemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH4) reduction of tungsten hexafluoride (WF6). For SiH4/WF6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten films. At a ratio of 3, hexagonal WSi2 is deposited, and at ratios of > 6 WSi2 along with silicon is deposited. A maximum in deposition rate is obtained for WSi2 at the ratio of 3, and the deposition rate drops as more silicon is being deposited. The step coverage of films drops dramatically as one moves away from pure W films. The deposition of these films takes place without any incubation time.

Sign in / Sign up

Export Citation Format

Share Document