Experimental Investigation of the Gas Phase in a Chemical Vapor Deposition Reaction: Application to the Silane‐Ammonia Reaction Leading to Silicon Nitride Deposits

1978 ◽  
Vol 125 (3) ◽  
pp. 487-492 ◽  
Author(s):  
G. Cochet ◽  
H. Mellottée ◽  
R. Delbourgo
Keyword(s):  
Experimental Investigation ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reaction

Gas Phase Decomposition of an Organometallic Chemical Vapor Deposition Precursor to AIN:[AI(CH3)2NH2]3

1989 ◽  
Vol 168 ◽  
Author(s):  
Carmela C. Amato ◽  
John B. Hudson ◽  
Leonard V. Interrante
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Phase Decomposition ◽  
Novel Technique ◽  
Organometallic Precursor ◽  
Chemical Vapor Deposition Reaction

AbstractA novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organometallic precursor to AIN, [AI(CH3)2NH2]3, indicate a decomposition temperature between 200 and 270°C. The mass spectrum of the precursor at 100°C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry
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