Photochromic properties of cationic merocyanine dyes. Thermal stability of the spiropyran form produced by irradiation with visible light

1999 ◽  
Vol 9 (12) ◽  
pp. 2991-2997 ◽  
Author(s):  
Shigeyuki Yagi ◽  
Katsumi Maeda ◽  
Hiroyuki Nakazumi
RSC Advances ◽  
2021 ◽  
Vol 11 (34) ◽  
pp. 21097-21103
Author(s):  
Mikhail Yu. Belikov ◽  
Mikhail Yu. Ievlev

The temperature effect on the thermal stability of both the initial and photoinduced forms of nitrile-rich T-type photochromes was studied for the first time.


2019 ◽  
Vol 43 (22) ◽  
pp. 8414-8417 ◽  
Author(s):  
Mikhail Yu. Belikov ◽  
Mikhail Yu. Ievlev ◽  
Sergey V. Fedoseev ◽  
Oleg V. Ershov

High photoswitching contrast and variation of the thermal stability of the photoinduced form for a novel group of reverse photochromes are described for the first time.


Author(s):  
Kim Kuntze ◽  
Jani Viljakka ◽  
Evgenii Titov ◽  
Zafar Ahmed ◽  
Elina Kalenius ◽  
...  

AbstractThermally stable photoswitches that are driven with low-energy light are rare, yet crucial for extending the applicability of photoresponsive molecules and materials towards, e.g., living systems. Combined ortho-fluorination and -amination couples high visible light absorptivity of o-aminoazobenzenes with the extraordinary bistability of o-fluoroazobenzenes. Herein, we report a library of easily accessible o-aminofluoroazobenzenes and establish structure–property relationships regarding spectral qualities, visible light isomerization efficiency and thermal stability of the cis-isomer with respect to the degree of o-substitution and choice of amino substituent. We rationalize the experimental results with quantum chemical calculations, revealing the nature of low-lying excited states and providing insight into thermal isomerization. The synthesized azobenzenes absorb at up to 600 nm and their thermal cis-lifetimes range from milliseconds to months. The most unique example can be driven from trans to cis with any wavelength from UV up to 595 nm, while still exhibiting a thermal cis-lifetime of 81 days. Graphical abstract


Polymers ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 695 ◽  
Author(s):  
Qingqing Wu ◽  
Wen Liao ◽  
Ying Xiong ◽  
Jianjing Yang ◽  
Zhen Li ◽  
...  

A silicone-thioxanthone (STX) visible light photoinitiator was prepared by the nucleophilic substitution reaction of 2-[(4-hydroxybenzyl)-(methyl)-amino]-9H-thioxanthen-9-one (TX-HB) and γ-chloropropylmethylpolysiloxane-co-dimethyl-polysiloxane (PSO-Cl). Its structure was confirmed by 1H NMR, 13C NMR, FTIR, UV-vis and GPC. The photopolymerization kinetics of 1, 6-Hexanedioldiacrylate (HDDA) and trimethylolpropane triacrylate (TMPTA) initiated by STX confirmed that STX is an efficient photoinitiator. Its visible light photolysis experiment and the photopolymerization kinetics studies implied that a possible synergistic effect existed between two adjacent thioxanthone groups. Moreover, a higher migration stability was revealed in STX than 2-benzyl (methyl) amino-9H-thioxanthen-9-one (TX-B). STX could change the surface property of the cured film of polyurethane diacrylate prepolymer (PUA) from hydrophilic to hydrophobic, as well as change the thermal stability of the polymer network. Meanwhile, it could improve the resistance against water and acid. Thus, STX is an effective multifunctionalized photoinitiator.


2020 ◽  
Vol 21 (16) ◽  
pp. 5755
Author(s):  
Dariusz Chomicki ◽  
Oksana Kharchenko ◽  
Lukasz Skowronski ◽  
Jolanta Kowalonek ◽  
Anna Kozanecka-Szmigiel ◽  
...  

We present investigation of optical and photochromic properties as well as of surface quality of thin films of novel methacrylic polymers with 8-hydroxyquinoline azo-dyes in side-chain. Additionally, thermal stability of polymer powders was examined and their glass transition temperature was determined. Optical properties (extinction coefficient and refractive index) were determined by spectroscopic ellipsometry (SE) combined with absorbance measurements. Photoresponsive behavior was investigated by determination of photoisomerization rates under irradiation with unpolarized 365 nm light, as well as by conduction of holographic grating inscription experiment. Thin film quality was determined by atomic force microscopy (AFM) measurements. Thermal analysis was performed by thermogravimetric (TG), derivative thermogravimetric (DTG) and differential scanning calorimetry (DSC) measurements. We found that optical properties as well as photoisomerization rates of investigated polymers are dependent on the substituent in the para position of the phenyl ring. Surface relief grating inscription was successfully generated only for materials with chromophores containing dimethylamino (N(CH3)2) and methyl (CH3) substituents, but all materials exhibited birefringence grating in the bulk. Surface of most thin films was very smooth, but its quality was impaired by neutral (H) as well as carboxyl (COOH) substituent. Thermal stability of copolymers with side-chain chromophores was improved compared to pure poly(methyl methacrylate) (PMMA).


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

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