Ceria lattice oxygen ion substitution by Cl- during the reduction of Rh(Cl)/CeO2 catalysts. Formation and stability of CeOCl

1998 ◽  
Vol 94 (24) ◽  
pp. 3727-3735 ◽  
Author(s):  
Franck Fajardie ◽  
ois Tempere ◽  
Jean-Marie Manoli ◽  
Ge´rald Djega-Mariadassou ◽  
Gilbert Blanchard
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.


Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1023 ◽  
Author(s):  
Ashish Chhaganlal Gandhi ◽  
Chia-Liang Cheng ◽  
Sheng Yun Wu

We report the synthesis of room temperature (RT) stabilized γ–Bi2O3 nanoparticles (NPs) at the expense of metallic Bi NPs through annealing in an ambient atmosphere. RT stability of the metastable γ–Bi2O3 NPs is confirmed using synchrotron radiation powder X-ray diffraction and Raman spectroscopy. γ–Bi2O3 NPs exhibited a strong red-band emission peaking at ~701 nm, covering 81% integrated intensity of photoluminescence spectra. Our findings suggest that the RT stabilization and enhanced red-band emission of γ‒Bi2O3 is mediated by excess oxygen ion vacancies generated at the octahedral O(2) sites during the annealing process.


2021 ◽  
Author(s):  
Jun-Ichiro Makiura ◽  
Takuma Higo ◽  
Yutaro Kurosawa ◽  
Kota Murakami ◽  
Shuhei Ogo ◽  
...  

Efficient activation of CO2 at low temperature was achieved by reverse water–gas shift via chemical looping (RWGS-CL) by virtue of fast oxygen ion migration in a Cu–In structured oxide, even at lower temperatures.


2017 ◽  
Vol 97 ◽  
pp. 37-41 ◽  
Author(s):  
Tae Hyeop Kim ◽  
Min Yeong Gim ◽  
Ji Hwan Song ◽  
Won Choon Choi ◽  
Yong-Ki Park ◽  
...  
Keyword(s):  

2021 ◽  
Vol 9 (8) ◽  
pp. 5111-5112
Author(s):  
Huan Liu ◽  
Xiaoning Li ◽  
Cailing Peng ◽  
Liuyang Zhu ◽  
Yuanxi Zhang ◽  
...  

Correction for ‘Activating the lattice oxygen in (Bi0.5Co0.5)2O3 by vacancy modulation for efficient electrochemical water oxidation’ by Huan Liu et al., J. Mater. Chem. A, 2020, 8, 13150–13159, DOI: 10.1039/D0TA03411H.


Author(s):  
V. Janani ◽  
S. Induja ◽  
D. Jaison ◽  
E. Meher Abhinav ◽  
M. Mothilal ◽  
...  

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