Ion flux and deposition rate measurements in the RF continuous wave plasma polymerisation of acrylic acid

1998 ◽  
pp. 1221-1222 ◽  
Author(s):  
A. J. Beck ◽  
R. M. France ◽  
A. M. Leeson ◽  
R. D. Short ◽  
R. M. France ◽  
...  
1999 ◽  
Vol 1 (13) ◽  
pp. 3117-3121 ◽  
Author(s):  
S Candan ◽  
A J. Beck ◽  
L O'Toole ◽  
R D. Short ◽  
A Goodyear ◽  
...  

2003 ◽  
pp. 348-349 ◽  
Author(s):  
David Barton ◽  
Robert D. Short ◽  
Stuart Fraser ◽  
James W. Bradley

Langmuir ◽  
2000 ◽  
Vol 16 (13) ◽  
pp. 5654-5660 ◽  
Author(s):  
David B. Haddow ◽  
Richard M. France ◽  
Robert D. Short ◽  
James W. Bradley ◽  
David Barton

2015 ◽  
Vol 328 ◽  
pp. 287-295 ◽  
Author(s):  
Roberto Nisticò ◽  
Andrea Rosellini ◽  
Paola Rivolo ◽  
Maria Giulia Faga ◽  
Roberta Lamberti ◽  
...  

2010 ◽  
Vol 160-162 ◽  
pp. 1839-1844
Author(s):  
Hong Tao Li ◽  
Bai Ling Jiang ◽  
Bo Yang ◽  
Zheng Cao

Based on deposition rate of coatings and ion flux measured by Langmuir probe in sputtering environment, bombardment energy Ec1 of sputtered neutral atoms and bombardment energy Ec2 of bombardment ions accepted by substrate surface micro-area per unit time were calculated. The magnitude of Ec1 and Ec2 was approximately the same, surface diffusing processes of the top layer atoms in the coating were accelerated by the simultaneity action of Ec1 and Ec2, bulk diffusion processes of the atoms under the top layer in the coating were promoted by energy accumulation and temperature rise effect caused by the continuance action of Ec1 and Ec2.


2008 ◽  
Vol 112 (13) ◽  
pp. 3938-3947 ◽  
Author(s):  
Ian Swindells ◽  
Sergey A. Voronin ◽  
Paul M. Bryant ◽  
Morgan R. Alexander ◽  
James W. Bradley

2007 ◽  
Vol 111 (13) ◽  
pp. 3419-3429 ◽  
Author(s):  
Sergey A. Voronin ◽  
Mischa Zelzer ◽  
Catalin Fotea ◽  
Morgan R. Alexander ◽  
James W. Bradley

1998 ◽  
Vol 507 ◽  
Author(s):  
Scott Morrison ◽  
Jianping Xi ◽  
Arun Madan

ABSTRACTThe pulsed plasma technique has been shown to increase the deposition rate without an increase in the particulate count in the plasma which is an important factor determining the yield of commercial products such as active matrix displays. In this paper, we report the deposition of amorphous silicon at deposition rates of up to 15 Å/sec, using a modulation frequency in the range of 1-100kHz. These materials have been incorporated into a simple p/i/n solar cell and thin film transistor (TFT) configurations. We report on the effect of the conversion efficiency as a function of the modulation frequency, which in turn is related to the deposition rate. We also report on the TFT performance with modulation frequency and compare the results with devices made under the conventional continuous wave PECVD plasma at 13.56MHz.


1999 ◽  
Vol 115 (9) ◽  
pp. 274-279 ◽  
Author(s):  
T Öktem ◽  
H Ayhan ◽  
N Seventekin ◽  
E Piskin

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