scholarly journals Organic Power Electronics: Transistor Operation in the kA/cm2 Regime

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Markus P. Klinger ◽  
Axel Fischer ◽  
Felix Kaschura ◽  
Johannes Widmer ◽  
Bahman Kheradmand-Boroujeni ◽  
...  

Abstract In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. Furthermore, organic transistors usually have much larger channel lengths than their inorganic counterparts since high-resolution structuring is not available in low-cost production schemes. Here, we present an organic permeable-base transistor (OPBT) which, despite extremely simple processing without any high-resolution structuring, achieve a performance beyond what has so far been possible using organic semiconductors. With current densities above 1 kA cm−2 and switching speeds towards 100 MHz, they open the field of organic power electronics. Finding the physical limits and an effective mobility of only 0.06 cm2 V−1 s−1, this OPBT device architecture has much more potential if new materials optimized for its geometry will be developed.

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.


Author(s):  
Dinesh Pathak ◽  
Sanjay Kumar ◽  
Sonali Andotra ◽  
Jibin Thomas ◽  
Navneet Kaur ◽  
...  

In this study, we have investigated new tailored organic semiconductors materials for the optoelectronic application, such as organic solar cells. The carbon-based organic semiconductor material has promising advantages in organic thin-film form. Moreover, due to its low cost, organic thin-films are suitable and cheaper than inorganic thin-film. The band gap of organic semiconductors materials can be tuned and mostly lies between 2.0eV to 4eV and the optical absorption edge of organic semiconductors typically lies in between 1.7eV to 3eV. They can be easily tailored by modifying the carbon chain and legends and looks promising for engineering the band gap to harness solar spectrum. In this work, with new tailored organic semiconductors the solution route is explored which is low cost processing method. (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline thin-films are processed by spin coating method with changing concentration such as 0.05 wt% and 0.08 wt%. Thin films of Organic semiconductors were prepared on glass substrate and annealed at 55°C. The structural and optical behaviour of (Anthracen-9-yl) methylene naphthalene-1-amine, 4-(anthracen-9-ylmethyleneamino)-1,5dimethyl-2-phenyl-1H-pyrazol-3-one and N-(anthracen-9-ylmethyl)-3,4-dimethoxyaniline organic semiconductors thin films is studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM) and UV-Visible Spectroscopy technique. The XRD data of synthesized sample suggests the Nano crystallinity of the Organic layers. The SEM micrographs shows the dense packing when we increase the wt% 0.05 to 0.08. Analysis of the optical absorption measurements found that the engineered band gap of synthesized thin films are 2.18eV, 2.35eV, 2.36eV, 2.52eV and 2.65eV which suggest suitability for applications of Optoelectronic devices such as solar cell. Such light weight, eco-friendly and disposable new carbon based materials seems to have potential to replace other traditional hazardous heavy materials for future eco-friendly flat fast electronics. Keywords: Thin-film, solar cell, tailored organic semiconductors, XRD, SEM, UV-Vis spectroscopy.


2003 ◽  
Vol 771 ◽  
Author(s):  
Steven K. Volkman ◽  
Steven Molesa ◽  
Brian Mattis ◽  
Paul C. Chang ◽  
Vivek Subramanian

AbstractPentacene is one of the most promising organic materials for organic transistor fabrication, since it offers higher mobility, better on-off ratio, improved environmental stability, and better reliability than most other organic semiconductors. However, its severe insolubility renders it useless for the solution-based fabrication of electronic devices. Solution-based processing is the key to enabling ultra-low-cost circuit fabrication, since it eliminates the need for lithography, subtractive processing, and vacuum-based film deposition. Using a recently developed soluble pentacene precursor, we demonstrate the first inkjet-printed pentacene transistor fabricated to date. This is achieved using a substrate-gated transistor structure in conjunction with an inkjetprinted pentacene precursor active layer. After deposition, the precursor is converted to pentacene via heating, through the decomposition of the Diels-Alder product. As the anneal temperature increases above 120°C, performance increases dramatically. The process is therefore compatible with numerous low-temperature plastics. As the anneal time is increased to several minutes, performance likewise increases through increased precursor decomposition. However, exposure to excess temperatures or times tends to degrade performance. This is caused by morphological and chemical changes in the pentacene film. Optimization of the anneal process alone has resulted in the demonstration of transistors with an on-off ratio of >105 and field-effect mobility of >0.01cm2/V-s, attesting to the great promise of this material.


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1185
Author(s):  
Matthew J. Griffith ◽  
Nathan A. Cooling ◽  
Daniel C. Elkington ◽  
Michael Wasson ◽  
Xiaojing Zhou ◽  
...  

This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of graphite nanoparticles in a rubber matrix into the multilayer nanostructure of a printed organic thin film transistor. This printed device was able to convert shock wave inputs rapidly and reproducibly into an inherently amplified electronic output signal. Variation of the organic ink material, solvents, and printing speeds were shown to modulate the multilayer nanostructure of the organic semiconducting and dielectric layers, enabling tuneable optimisation of the transistor response. The optimised printed device exhibits rapid switching from a non-conductive to a conductive state upon application of low pressures whilst operating at very low source-drain voltages (0–5 V), a feature that is often required in applications sensitive to stray electromagnetic signals but is not provided by conventional inorganic transistors and switches. The printed sensor also operates without the need for any gate voltage bias, further reducing the electronics required for operation. The printable low-voltage sensing and signalling system offers a route to simple low-cost assemblies for secure detection of stimuli in highly energetic systems including combustible or chemically sensitive materials.


Author(s):  
Houaida Becharguia ◽  
M. Mahdouani ◽  
R. Bourguiga

In this paper, we have study two types of thin-film organic transistors as well as the organic inverter. For manufacturing p-type and n-type organic thin film transistors (OTFT), pentacene and N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) were used as organic semiconductors. The organic thin film transistors showed excellent ambipolar operation. This ambipolar device is very useful in building flexible integrated circuits with easy design and low power consumption. The characterization and modeling of complementary thin film organic transistors allows us to describe one of its important applications which are the "inverter". In order to better understand the operation of inverters, an analytical model has been developed to describe the electrical behavior of both types of transistors and organic inverter. The model was carried out for transistors and organic inverters made experimentally. In this present work, we present the different electrical parameters resulting from the modeling for the two types of transistors and the organic inverter wich based on the complementary OTFTs.


2003 ◽  
Vol 769 ◽  
Author(s):  
Steven K. Volkman ◽  
Steven Molesa ◽  
Brian Mattis ◽  
Paul C. Chang ◽  
Vivek Subramanian

AbstractPentacene is one of the most promising organic materials for organic transistor fabrication, since it offers higher mobility, better on-off ratio, improved environmental stability, and better reliability than most other organic semiconductors. However, its severe insolubility renders it useless for the solution-based fabrication of electronic devices. Solution-based processing is the key to enabling ultra-low-cost circuit fabrication, since it eliminates the need for lithography, subtractive processing, and vacuum-based film deposition. Using a recently developed soluble pentacene precursor, we demonstrate the first inkjet-printed pentacene transistor fabricated to date. This is achieved using a substrate-gated transistor structure in conjunction with an inkjetprinted pentacene precursor active layer. After deposition, the precursor is converted to pentacene via heating, through the decomposition of the Diels-Alder product. As the anneal temperature increases above 120°C, performance increases dramatically. The process is therefore compatible with numerous low-temperature plastics. As the anneal time is increased to several minutes, performance likewise increases through increased precursor decomposition. However, exposure to excess temperatures or times tends to degrade performance. This is caused by morphological and chemical changes in the pentacene film. Optimization of the anneal process alone has resulted in the demonstration of transistors with an on-off ratio of >105 and field-effect mobility of >0.01cm2/V-s, attesting to the great promise of this material.


2009 ◽  
Vol 1154 ◽  
Author(s):  
Kengo Nakayama ◽  
Takafumi Uemura ◽  
M. Uno ◽  
Jun Takeya

AbstractSecondary-gate electrodes are introduced in organic thin-film transistors to reduce carrier-injection barriers into air-stable organic semiconductors. The additional gate electrodes buried in the gate insulators under the source and drain electrodes form “carrier-rich regions” in the vicinity of source and drain electrodes with the application of sufficiently high local electric fields. Fabricating the structure with dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, known for its excellent air-stability, it turned out that the contact resistance is drastically reduced especially when operated at low gate voltage in the main channel. The result demonstrates carrier injection with a minimized potential barrier realizing that from the same semiconductor material in the absence of peculiar interfacial trap levels at metal-to-semiconductor junctions.


2009 ◽  
Vol 1197 ◽  
Author(s):  
Jun Takeya ◽  
M. Uno ◽  
Kengo Nakayama

AbstractAttractiveness of organic field-effect transistors are in their low-cost and easy fabrication processes as well as their mechanical flexibility, while a significant drawback has been their poorer transistor performances than those of silicon and oxide semiconductors because of lower carrier mobility in organic semiconductors. We have developed an easy MEMS-based process to fabricate three-dimensional organic transistors with metal-insulator-semiconductor structures of multiple vertical channels on plastic platforms. The design maximizes the space availability and the output current per area. The flexible three-dimensional organic transistors indeed present outstanding current of ∼ 0.5 A/cm2, which is more than sufficient for driving pixels of typical organic light-emitting diodes. High on-off ratio up to 107 is also demonstrated.


Author(s):  
Liping Yao ◽  
Danlei Zhu ◽  
Hailiang Liao ◽  
Sheik Haseena ◽  
Mahesh kumar Ravva ◽  
...  

Due to their advantages of low-cost, light-weight, and mechanical flexibility, much attention has been focused on pi-conjugated organic semiconductors. In the past decade, although many materials with high performance has...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Dingwang Huang ◽  
Lintao Li ◽  
Kang Wang ◽  
Yan Li ◽  
Kuang Feng ◽  
...  

AbstractA highly efficient, low-cost and environmentally friendly photocathode with long-term stability is the goal of practical solar hydrogen evolution applications. Here, we found that the Cu3BiS3 film-based photocathode meets the abovementioned requirements. The Cu3BiS3-based photocathode presents a remarkable onset potential over 0.9 VRHE with excellent photoelectrochemical current densities (~7 mA/cm2 under 0 VRHE) and appreciable 10-hour long-term stability in neutral water solutions. This high onset potential of the Cu3BiS3-based photocathode directly results in a good unbiased operating photocurrent of ~1.6 mA/cm2 assisted by the BiVO4 photoanode. A tandem device of Cu3BiS3-BiVO4 with an unbiased solar-to-hydrogen conversion efficiency of 2.04% is presented. This tandem device also presents high stability over 20 hours. Ultimately, a 5 × 5 cm2 large Cu3BiS3-BiVO4 tandem device module is fabricated for standalone overall solar water splitting with a long-term stability of 60 hours.


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