scholarly journals Effects of collision cascade density on radiation defect dynamics in 3C-SiC

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
L. B. Bayu Aji ◽  
J. B. Wallace ◽  
S. O. Kucheyev
Keyword(s):  
Radiation Defect ◽  
Collision Cascade

scholarly journals Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si

2018 ◽  
Vol 120 (21) ◽  
Author(s):  
J. B. Wallace ◽  
L. B. Bayu Aji ◽  
L. Shao ◽  
S. O. Kucheyev
Keyword(s):  
Radiation Defect ◽  
Collision Cascade

scholarly journals New perspectives on collision cascade damage in self-ion irradiated tungsten from HR-EBSD and ECCI

2021 ◽  
pp. 153074
Author(s):  
Hongbing Yu ◽  
Phani Karamched ◽  
Suchandrima Das ◽  
Junliang Liu ◽  
Kenichiro Mizohata ◽  
...  
Keyword(s):  
Collision Cascade ◽  
Cascade Damage

The role of the impurity atmosphere of dislocations during radiation defect accumulation in silicon

1984 ◽  
Vol 82 (3-4) ◽  
pp. 287-293 ◽  
Author(s):  
L. A. Kazakevich ◽  
P. F. Lugakov ◽  
I. M. Filippov
Keyword(s):  
Radiation Defect ◽  
Defect Accumulation

Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon

2015 ◽  
Vol 242 ◽  
pp. 279-284
Author(s):  
P. Kamiński ◽  
R. Kozłowski ◽  
Barbara Surma ◽  
Michal Kozubal ◽  
Christian Hindrichsen ◽  
...  
Keyword(s):  
Radiation Defect ◽  
Nitrogen Doping ◽  
Activation Energies ◽  
Fast Neutrons ◽  
Defect Centers ◽  
Transmutation Doping ◽  
N Doping ◽  
Neutron Transmutation ◽  
Transient Spectroscopy ◽  
Free Material

High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to determining the properties and concentrations of radiation defect centers formed in FZ silicon single crystals subjected to doping with phosphorus in neutron transmutation processes. The studies were performed immediately after the neutron irradiation on the samples with the resistivity of the order of 105 Ωcm. The preset target resistivity was around 2000 Ωcm. The N-doping effect on the material radiation damage has been demonstrated. It is shown that in the N-enriched material, the radiation defect centers with activation energies of 81, 125, 160, 185, and 390 meV are not observed and the concentrations of the defect centers with activation energies of 46, 84, 133, 140, 265, 300, 380, 460, and 546 meV are significantly lower than those in the N-free material. We also show that the majority of defect centers produced by the irradiation of FZ silicon with fast neutrons are also observed after neutron transmutation doping.

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