scholarly journals Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Matthias Schreck ◽  
Stefan Gsell ◽  
Rosaria Brescia ◽  
Martin Fischer
Keyword(s):  
Single Crystal ◽  
Ion Bombardment ◽  
Lateral Growth ◽  
Single Crystal Diamond

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

2017 ◽  
Vol 29 (16) ◽  
pp. 1604823 ◽  
Author(s):  
Alexandre Tallaire ◽  
Ovidiu Brinza ◽  
Vianney Mille ◽  
Ludovic William ◽  
Jocelyn Achard
Keyword(s):  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

Homoepitaxial lateral growth of single-crystal diamond with eliminating PCD rim and enlarging surface area

Vacuum ◽  
2021 ◽  
pp. 110820
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Deng Gao ◽  
Qiuming Fu ◽  
Hongyang Zhao
Keyword(s):  
Single Crystal ◽  
Surface Area ◽  
Lateral Growth ◽  
Single Crystal Diamond

Single crystal Cu (110) inducing lateral growth of electrodeposition Li for dendrite-free Li metal-based batteries

2021 ◽  
Vol 501 ◽  
pp. 229969
Author(s):  
Chao Shen ◽  
Jinlei Gu ◽  
Nan Li ◽  
Zuling Peng ◽  
Keyu Xie
Keyword(s):  
Single Crystal ◽  
Lateral Growth

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

Development of Diamond-Based X-ray Detection for High Flux Beamline Diagnostics

2009 ◽  
Vol 1203 ◽  
Author(s):  
Jen Bohon ◽  
John Smedley ◽  
Erik M. Muller ◽  
Jeffrey W. Keister
Keyword(s):  
Single Crystal ◽  
Linear Response ◽  
Voltage Dependence ◽  
Cvd Diamond ◽  
High Flux ◽  
National Synchrotron Light Source ◽  
X Ray ◽  
Single Crystal Diamond ◽  
Synchrotron Light ◽  
Pulse Structure

AbstractHigh quality single crystal and polycrystalline CVD diamond detectors with platinum contacts have been tested at the white beam X28C beamline at the National Synchrotron Light Source under high-flux conditions. The voltage dependence of these devices has been measured under DC and pulsed-bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response has been achieved over eleven orders of magnitude when combined with previous low flux studies. Temporal measurements with single crystal diamond detectors have resolved the ns scale pulse structure of the NSLS.

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