scholarly journals Enhanced stability of filament-type resistive switching by interface engineering

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Y. B. Zhu ◽  
K. Zheng ◽  
X. Wu ◽  
L. K. Ang
Keyword(s):  
Resistive Switching ◽  
Interface Engineering ◽  
Enhanced Stability ◽  
Filament Type

Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM

2013 ◽  
Vol 109 ◽  
pp. 385-388 ◽  
Author(s):  
Daeseok Lee ◽  
Jiyong Woo ◽  
Euijun Cha ◽  
Seonghyun Kim ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Interface Engineering ◽  
Filament Type

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

Small ◽  
2017 ◽  
Vol 14 (2) ◽  
pp. 1702525 ◽  
Author(s):  
Xue-Feng Wang ◽  
He Tian ◽  
Hai-Ming Zhao ◽  
Tian-Yu Zhang ◽  
Wei-Quan Mao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Pd Nanoparticles ◽  
Hybrid Structure ◽  
Interface Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory

INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES

2011 ◽  
Vol 01 (02) ◽  
pp. 141-162 ◽  
Author(s):  
SHENG-YU WANG ◽  
TSEUNG-YUEN TSENG
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Random Access ◽  
Metal Electrode ◽  
Interface Layer ◽  
Digital Data ◽  
Interface Engineering ◽  
Device Structure ◽  
Ongoing Research ◽  
Operation Speed

Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The RRAM devices primarily utilize different resistance values to store the digital data and can keep the resistance state without any power. Recent advances in the understanding of the resistive switching mechanism are described by a thermal or electrochemical redox reaction near the interface between the oxide and the active metal electrode. This paper reviews the ongoing research and development activities on the interface engineering of the RRAM devices. The possible switching mechanisms for the bistable resistive switching are described. The effects of formation, composition and thickness of the interface layer on the resistive switching characteristics and consequently the memory performance are also discussed.

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

2016 ◽  
Vol 28 (5) ◽  
pp. 055204 ◽  
Author(s):  
Zongwei Wang ◽  
Jian Kang ◽  
Zhizhen Yu ◽  
Yichen Fang ◽  
Yaotian Ling ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Interface Engineering ◽  
Resistive Switching Behavior

scholarly journals Approaches for improving the performance of filament-type resistive switching memory

2011 ◽  
Vol 56 (4-5) ◽  
pp. 461-464 ◽  
Author(s):  
WenTai Lian ◽  
ShiBing Long ◽  
HangBing Lü ◽  
Qi Liu ◽  
YingTao Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Filament Type
Sign in / Sign up

Export Citation Format

Share Document