scholarly journals Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
MinKwan Kim ◽  
Sunghan Choi ◽  
Joo-Hyung Lee ◽  
ChungHyun Park ◽  
Tae-Hoon Chung ◽  
...  
Keyword(s):  
Correlation Analysis ◽  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Carrier Localization ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

scholarly journals Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 633 ◽  
Author(s):  
Li ◽  
Tang ◽  
Zhang ◽  
Guo ◽  
Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Field ◽  
Light Output ◽  
Current Injection ◽  
Light Output Power ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

The size of the V-defects in the GaN/InGaN-based quantum wells blue light-emitting diode (LED) was intentionally modified from 50 nm to 300 nm. High resolution photoluminescence and electroluminescence of a single large V-defect were investigated by near-field scanning optical microscopy. The current distribution along the {10-11} facets of the large defect was measured by conductive atomic force microscopy. Nearly 20 times the current injection and dominant emission from bottom quantum wells were found in the V-defect compared to its vicinity. Such enhanced current injection into the bottom part of quantum wells through V-defect results in higher light output power. Reduced external quantum efficiency droops were achieved due to more uniform carrier distribution. The un-encapsulated fabricated chip shows light output power of 172.5 mW and 201.7 mW at 400 mA, and external quantum efficiency drop of 22.3% and 15.4% for the sample without and with large V-defects, respectively. Modified V-defects provide a simple and effective approach to suppress the efficiency droop problem that occurs at high current injection, while improving overall quantum efficiency.

Spatially resolved photoluminescence in InGaN/GaN quantum wells by near-field scanning optical microscopy

2001 ◽  
Vol 79 (7) ◽  
pp. 976-978 ◽  
Author(s):  
M. S. Jeong ◽  
J. Y. Kim ◽  
Y.-W. Kim ◽  
J. O. White ◽  
E.-K. Suh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Microscopy ◽  
Near Field ◽  
Spatially Resolved ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Raman imaging with near‐field scanning optical microscopy

1995 ◽  
Vol 67 (17) ◽  
pp. 2483-2485 ◽  
Author(s):  
C. L. Jahncke ◽  
M. A. Paesler ◽  
H. D. Hallen
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Raman Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Investigations of liquid crystals and liquid ambients using near-field scanning optical microscopy

1995 ◽  
Vol 61 (1-4) ◽  
pp. 291-294 ◽  
Author(s):  
Patrick J. Moyer ◽  
Stefan Kämmer ◽  
Karsten Walzer ◽  
Michael Hietschold
Keyword(s):  
Liquid Crystals ◽  
Optical Microscopy ◽  
Near Field ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Near-field scanning optical microscopy for characterisation of photovoltaic materials

2004 ◽  
Vol 1 (9) ◽  
pp. 2292-2297 ◽  
Author(s):  
E. E. van Dyk ◽  
A. Karoui ◽  
A. H. La Rosa ◽  
G. Rozgonyi
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Photovoltaic Materials ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning
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