scholarly journals Role of molecular conformations in rubrene polycrystalline films growth from vacuum deposition at various substrate temperatures

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Ku-Yen Lin ◽  
Yan-Jun Wang ◽  
Ko-Lun Chen ◽  
Ching-Yuan Ho ◽  
Chun-Chuen Yang ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Polycrystalline Films ◽  
Molecular Conformations ◽  
Substrate Temperatures

Rubrene polycrystalline films growth from vacuum deposition at various substrate temperatures

2016 ◽  
Vol 439 ◽  
pp. 54-59 ◽  
Author(s):  
Ku-Yen Lin ◽  
Yan-Jun Wang ◽  
Ko-Lun Chen ◽  
Chun-Chuen Yang ◽  
Ching-Yuan Ho ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Polycrystalline Films ◽  
Substrate Temperatures

scholarly journals Characterization of coumarin-6 polycrystalline films growth from vacuum deposition at various substrate temperatures

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Ko-Lun Chen ◽  
Hui-Ting Liu ◽  
Jang-Hung Yu ◽  
Yung-Hsiang Tung ◽  
Yun-Syuan Chou ◽  
...  
Keyword(s):  
Vacuum Deposition ◽  
Polycrystalline Films ◽  
Substrate Temperatures ◽  
Coumarin 6

scholarly journals Frequency dispersion reveals chromophore diversity and colour-tuning mechanism in parrot feathers

2018 ◽  
Vol 5 (7) ◽  
pp. 172010 ◽  
Author(s):  
Jonathan E. Barnsley ◽  
Elliot J. Tay ◽  
Keith C. Gordon ◽  
Daniel B. Thomas
Keyword(s):  
Frequency Dispersion ◽  
Animal Coloration ◽  
Molecular Conformations ◽  
Tuning Mechanism ◽  
Resonance Raman Spectra ◽  
Molecule Interactions ◽  
Yellow Region ◽  
Colour Tuning

Variation in animal coloration is often viewed as the result of chemically distinct pigments conferring different hues. The role of molecular environment on hue tends to be overlooked as analyses are mostly performed on free pigments extracted from the integument. Here we analysed psittacofulvin pigments within parrot feathers to explore whether the in situ organization of pigments may have an effect on hue. Resonance Raman spectra from a red region of a yellow-naped amazon Amazona auropalliata tail feather show frequency dispersion, a phenomenon that is related to the presence of a range of molecular conformations (and multiple chromophores) in the pigment, whereas spectra from a yellow region on the same feather do not show the same evidence for multiple chromophores. Our findings are consistent with non-isomeric psittacofulvin pigments behaving as a single chromophore in yellow feather barbs, which implies that psittacofulvins are dispersed into a structurally disordered mixture in yellow feathers compared with red feathers. Frequency dispersion in red barbs may instead indicate that pigments are structurally organized through molecule–molecule interactions. Major differences in the hues of parrot feathers are thus associated with differences in the organization of pigments within feathers.

scholarly journals Simulations of the static and dynamic molecular conformations of xyloglucan. The role of the fucosylated sidechain in surface-specific sidechain folding

1991 ◽  
Vol 1 (2) ◽  
pp. 195-215 ◽  
Author(s):  
Samuel Levy ◽  
William S. York ◽  
Rainer Stuike-Prill ◽  
Bernd Meyer ◽  
L. Andrew Staehelin
Keyword(s):  
Molecular Conformations

Epitaxial Iridium Growth on Strontium Titanate

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Dai ◽  
A.P. Li ◽  
C. Bednarski ◽  
L. I. McCann ◽  
B. Golding
Keyword(s):  
Surface Roughness ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Electron Beam Evaporation ◽  
Layer By Layer ◽  
Epitaxial Relationship ◽  
Ion Channeling ◽  
Substrate Temperatures ◽  
Subsequent Layer

AbstractEpitaxial (100) iridium films have been grown on (100) SrTiO3 (STO) substrates by electron beam evaporation. The epitaxial relationship between the iridium film and STO substrate was determined to be Ir(001)[100]//STO(001)[100]. A systematic study of the role of STO substrate surface preparation, Ir thickness, and substrate temperature on Ir film crystallinity and morpholo- gy has been performed. The best Ir films typically have small Ir(200) XRD linewidths < 0.3 °, surface roughness of 0.2 nm, and low ion channeling yields, χmin≤ 4%, when deposited at 800 °C. Films generally become smoother with better crystallinity when the film thickness approaches 300 nm. A growth mode with initial island formation and subsequent layer-by-layer appears to take place at higher substrate temperatures, whereas at lower temperatures the film grows in a 3D mode.

The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
J. L. Batstone
Keyword(s):  
High Temperature ◽  
Crystalline Material ◽  
High Dose ◽  
Si Substrate ◽  
High Temperature Anneal ◽  
Damage Structure ◽  
Amorphous Si ◽  
Substrate Temperatures

AbstractFrom the early work on high dose oxygen implantation for buried SiO2 formation, it is apparent that the temperature of the Si substrate during the implant has a strong influence on the quality of both the SiO2 layer and the overlying Si. This, in turn, can be related to the damage from the oxygen implant. For substrate temperatures < ∼ 300°C, amorphous Si is created during the implant and leads to the formation of twins or polycrystalline Si during the subsequent high temperature (>1300°C) anneal. At higher substrate temperatures (<∼400°C), dynamic annealing eliminates the amorphous Si, but the implanted oxygen appears to segregate during the implant leading to oxygen-rich amorphous regions imbedded in regions of crystalline material. As the amorphous regions start to coalesce and form SiO2 during the high temperature anneal, they trap crystalline Si which cannot escape by diffusion. This process can be circumvented by using a randomizing Si implant to change the damage structure from the oxygen implant before annealing. We have seen these effects clearly in sub-stoichiometric implants, and believe they are also operative during stoichiometric implants.

Triethylsilanol:  Molecular Conformations and Role of the Hydrogen-Bonding Oligomerization in Its Vibrational Spectra

2008 ◽  
Vol 112 (7) ◽  
pp. 1545-1551 ◽  
Author(s):  
Manuel Montejo ◽  
Francisco Partal Ureña ◽  
Fernando Márquez ◽  
Juan Jesús López González
Keyword(s):  
Hydrogen Bonding ◽  
Vibrational Spectra ◽  
Molecular Conformations

scholarly journals The role of electron-stimulated desorption in focused electron beam induced deposition

2013 ◽  
Vol 4 ◽  
pp. 474-480 ◽  
Author(s):  
Willem F van Dorp ◽  
Thomas W Hansen ◽  
Jakob B Wagner ◽  
Jeff T M De Hosson
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Electron Beam ◽  
Electron Irradiation ◽  
Carbon Membrane ◽  
Average Value ◽  
Fundamental Process ◽  
Electron Stimulated Desorption ◽  
Substrate Temperatures

We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor it is observed that the growth rate is lower at higher substrate temperatures. From Arrhenius plots we calculated the activation energy for desorption, E des, of W(CO)6. We found an average value for E des of 20.3 kJ or 0.21 eV, which is 2.5–3.0 times lower than literature values. This difference between estimates for E des from FEBIP experiments compared to literature values is consistent with earlier findings by other authors. The discrepancy is attributed to electron-stimulated desorption, which is known to occur during electron irradiation. The data suggest that, of the W(CO)6 molecules that are affected by the electron irradiation, the majority desorbs from the surface rather than dissociates to contribute to the deposit. It is important to take this into account during FEBIP experiments, for instance when determining fundamental process parameters such as the activation energy for desorption.

Synthesis and Characterization of PbTiO3 Thin Films Grown by Chemical Beam Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
K.Y. Hsieh ◽  
S.H. Rou ◽  
L.L.H. King ◽  
A.I. Kingon
Keyword(s):  
Thin Films ◽  
Active Oxygen ◽  
Deposition Technique ◽  
Fine Grained ◽  
Si Substrates ◽  
Gaas Devices ◽  
Substrate Temperatures ◽  
Beam Deposition

ABSTRACTA new deposition technique for PbTiO3 films utilizing chemical beams of metalorganic sources in an ultrahigh vacuum chamber is demonstrated. Ozone is introduced to provide a source of active oxygen. The role of active oxygen in controlling the surface chemical reactions is discussed. Fine grained, single phase PbTiO3 films have been deposited on MgO (100) and SiO2/Si substrates at substrate temperatures as low as 350°C. Films were characterized by XRD, SEM, and TEM. The results suggest that the chemical beam deposition technique provides another method for the fabrication and integration of ferroelectric thin films with silicon (or GaAs) devices.

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