scholarly journals Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Huan-Yu Shih ◽  
Wei-Hao Lee ◽  
Wei-Chung Kao ◽  
Yung-Chuan Chuang ◽  
Ray-Ming Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ultrathin Films ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

scholarly journals AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12226-12231 ◽  
Author(s):  
Wei-Chung Kao ◽  
Wei-Hao Lee ◽  
Sheng-Han Yi ◽  
Tsung-Han Shen ◽  
Hsin-Chih Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Schematic Diagram ◽  
Layer Deposition ◽  
Processing Cycle

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Rheed Studies of a-Axis Oriented DyBa2Cu3O7 Films Grown by All-MBE

1997 ◽  
Vol 502 ◽  
Author(s):  
Ivan Bozovic ◽  
J. N. Eckstein ◽  
Natasha Bozovic ◽  
J. O'Donnell
Keyword(s):  
Phase Transitions ◽  
Secondary Phase ◽  
Atomic Layer ◽  
High Energy ◽  
Layer By Layer ◽  
Growth Modes ◽  
Flow Surface ◽  
Surface Phase Transitions

ABSTRACTReal-time, in-situ surface monitoring by reflection high-energy electron diffraction (RHEED) has been the key enabling component of atomic-layer-by-layer molecular beam epitaxy (ALL-MBE) of complex oxides. RHEED patterns contain information on crystallographic arrangements and long range order on the surface; this can be made quantitative with help of numerical simulations. The dynamics of RHEED patterns and intensities reveal a variety of phenomena such as nucleation and dissolution of secondary-phase precipitates, switching between growth modes (layer-by-layer, step-flow), surface phase transitions (surface reconstruction, roughening, and even phase transitions induced by the electron beam itself), etc. Some of these phenomena are illustrated here, using as a case study our recent growth of atomically smooth a-axis oriented DyBa2Cu3O7 films.

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

2012 ◽  
Vol 24 (19) ◽  
pp. 3732-3737 ◽  
Author(s):  
Mariona Coll ◽  
Jaume Gazquez ◽  
Anna Palau ◽  
Maria Varela ◽  
Xavier Obradors ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Epitaxial Oxide

Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

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