Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
Keyword(s):
2011 ◽
Vol E94-C
(5)
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pp. 786-790
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Keyword(s):
2010 ◽
Vol 157
(12)
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pp. H1110
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Keyword(s):
2014 ◽
Vol 35
(12)
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pp. 1266-1268
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2012 ◽
Vol 29
(1)
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pp. 018501
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2013 ◽
Vol 23
(11)
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pp. 1349-1349
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Keyword(s):
Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors
2010 ◽
Vol 13
(4)
◽
pp. H101
◽
Keyword(s):