scholarly journals Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
M. A. Reshchikov ◽  
J. D. McNamara ◽  
M. Toporkov ◽  
V. Avrutin ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Electron Capture ◽  
Free Electrons ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FJ01 ◽  
Author(s):  
Felix Nippert ◽  
Sergey Karpov ◽  
Ines Pietzonka ◽  
Bastian Galler ◽  
Alexander Wilm ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Small Signal ◽  
Time Resolved ◽  
Light Emitting ◽  
Time Resolved Photoluminescence ◽  
Signal Time

Determination of Peptide Topology through Time-Resolved Double-Resonance under Electron Capture Dissociation Conditions

2012 ◽  
Vol 84 (11) ◽  
pp. 4957-4964 ◽  
Author(s):  
Marie Pérot-Taillandier ◽  
Séverine Zirah ◽  
Sylvie Rebuffat ◽  
Uwe Linne ◽  
Mohamed A. Marahiel ◽  
...  
Keyword(s):  
Electron Capture ◽  
Electron Capture Dissociation ◽  
Double Resonance ◽  
Time Resolved

ARGON RECOIL ION ELECTRON CAPTURE FROM NEUTRAL ARGON AND HELIUM STUDIED BY TIME RESOLVED V.U.V. SPECTROSCOPY

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-363-C1-369
Author(s):  
I. LESTEVEN-VAISSE ◽  
M. CHANTEPIE ◽  
F. FOLKMANN ◽  
D. LECLER ◽  
A. BEN SITEL
Keyword(s):  
Electron Capture ◽  
Time Resolved

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

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