Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

Chang-Hyun Kim; Sujin Sung; Myung-Han Yoon

doi:10.1038/srep33355

Charge Trapping at the Dielectric of Organic Transistors Visualized in Real Time and Space

Advanced Materials ◽

10.1002/adma.200702688 ◽

2008 ◽

Vol 20 (5) ◽

pp. 975-979 ◽

Cited By ~ 116

Author(s):

S. G. J. Mathijssen ◽

M. Kemerink ◽

A. Sharma ◽

M. Cölle ◽

P. A. Bobbert ◽

...

Keyword(s):

Real Time ◽

Charge Trapping ◽

Organic Transistors ◽

Time And Space

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Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors

Advanced Functional Materials ◽

10.1002/adfm.201201084 ◽

2012 ◽

Vol 22 (22) ◽

pp. 4833-4839 ◽

Cited By ~ 49

Author(s):

Hyun Ho Choi ◽

Wi Hyoung Lee ◽

Kilwon Cho

Keyword(s):

Polymer Chain ◽

Gate Dielectrics ◽

Charge Trapping ◽

Organic Transistors ◽

Bias Stress ◽

Induced Charge

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Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula

Advanced Functional Materials ◽

10.1002/adfm.201201545 ◽

2012 ◽

Vol 23 (6) ◽

pp. 690-696 ◽

Cited By ~ 29

Author(s):

Hyun Ho Choi ◽

Moon Sung Kang ◽

Min Kim ◽

Haena Kim ◽

Jeong Ho Cho ◽

...

Keyword(s):

Gate Dielectrics ◽

Charge Trapping ◽

Organic Transistors ◽

Stretched Exponential ◽

Bias Stress ◽

Induced Charge ◽

Exponential Formula

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Controlling carrier trapping and relaxation with a dipole field in an organic field-effect device

RSC Advances ◽

10.1039/c6ra09676j ◽

2016 ◽

Vol 6 (81) ◽

pp. 77735-77744 ◽

Cited By ~ 4

Author(s):

Yu-Fu Wang ◽

Min-Ruei Tsai ◽

Po-Yang Wang ◽

Chin-Yang Lin ◽

Horng-Long Cheng ◽

...

Keyword(s):

Memory Effect ◽

Dielectric Layer ◽

Field Effect ◽

Gate Dielectric ◽

Charge Trapping ◽

Dipole Field ◽

Organic Transistors ◽

Electrical Stability ◽

Carrier Trapping

A novel polyimide electret using as the gate dielectric layer and charge trapping layer of n-type organic transistors was synthesized to improve the memory effect and electrical stability.

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Processing–Structure–Performance Relationship in Organic Transistors: Experiments and Model

Electronics ◽

10.3390/electronics11020197 ◽

2022 ◽

Vol 11 (2) ◽

pp. 197

Author(s):

Rosalba Liguori ◽

Antonio Facchetti ◽

Gian Domenico Licciardo ◽

Luigi Di Benedetto

Keyword(s):

Charge Trapping ◽

Organic Transistors ◽

Organic Thin Film ◽

Metal Contacts ◽

Dispersive Transport ◽

Force Microscopy ◽

Atomic Force ◽

Wide Range ◽

Mobile Ions ◽

Physical Phenomena

In this paper, organic thin film transistors with different configurations are fabricated, and the effect on their performance when tailoring the semiconductor/insulator and semiconductor/contact interfaces through suitable treatments is analyzed. It is shown that the admittance spectroscopy used together with a properly developed electrical model turns out to be a particularly appropriate technique for correlating the performance of devices based on new materials in the manufacturing methods. The model proposed here to describe the equivalent metal–insulator–semiconductor (MIS) capacitor enables the extraction of a wide range of parameters and the study of the physical phenomena occurring in the transistors: diffusion of mobile ions through the insulator, charge trapping at the interfaces, dispersive transport in the semiconductor, and charge injection at the metal contacts. This is necessary to improve performance and stability in the case, like this one, of a novel organic semiconductor being employed. Atomic force microscopy images are also exploited to support the relationship between the semiconductor morphology and the electrical parameters.

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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