scholarly journals Measurement and Modeling of Short and Medium Range Order in Amorphous Ta2O5 Thin Films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Badri Shyam ◽  
Kevin H. Stone ◽  
Riccardo Bassiri ◽  
Martin M. Fejer ◽  
Michael F. Toney ◽  
...  
Keyword(s):  
Thin Films ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range

Hydrogen-Induced Reduction in Medium Range Order of a-Si Thin Films Observed using Fluctuation Electron Microscopy

2004 ◽  
Vol 10 (S02) ◽  
pp. 802-803
Author(s):  
Lakshmi Narayana Nittala ◽  
Sreenivas Jayaraman ◽  
Brent A Sperling ◽  
John R Abelson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

scholarly journals Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

2016 ◽  
Vol 108 (22) ◽  
pp. 221906 ◽  
Author(s):  
T. T. Li ◽  
L. B. Bayu Aji ◽  
T. W. Heo ◽  
M. K. Santala ◽  
S. O. Kucheyev ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Range Order ◽  
Laser Crystallization ◽  
Amorphous Germanium ◽  
Medium Range Order ◽  
Medium Range

Local short- and medium-range order in amorphous transparent oxide thin films

2012 ◽  
Vol 18 (S2) ◽  
pp. 1458-1459
Author(s):  
A. Yan ◽  
B. Buchholz ◽  
R. Chang ◽  
V. Dravid ◽  
K.B. Borisenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Range Order ◽  
Oxide Thin Films ◽  
Medium Range Order ◽  
Medium Range ◽  
Transparent Oxide

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Fluctuation Electron Microscopy Study of Medium-Range Packing Order in Ultrastable Indomethacin Glass Thin Films

2015 ◽  
Vol 1757 ◽  
Author(s):  
L. He ◽  
A. Gujral ◽  
M. D. Ediger ◽  
P. M. Voyles
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Beam Current ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Range Order ◽  
Total Electron ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy

ABSTRACTWe have used fluctuation electron microscopy (FEM) to measure the medium range order in the molecular packing of 40 nm thick indomethacin glass films. Vapor deposition of indomethacin can create glasses with extraordinary kinetic stability and high density. We find peaks in the FEM variance at diffraction vector magnitudes between 0.03 and 0.09 Å-1, corresponding to intermolecular packing distances of 1-3 nm. FEM experiments were performed with a 13 nm diameter electron probe, so these data are sensitive to medium-range order in intermolecular packing. The FEM variance from an indomethacin glass with normal stability cooled from the liquid is significantly smaller than the variance from the ultrastable glass, suggesting that ultrastable glass is more structurally heterogeneous at a 13 nm length scale. A dose of ∼7×105 e-/nm2 with a very low beam current of ∼ 2.5 pA at 200 kV was used to minimize electron beam damage to the sample, and the average electron diffraction from the sample is unchanged at total electron doses fourteen times larger than required for a FEM experiment. These preliminary results on medium-range order in molecular glasses suggest that we may be able to provide insight into the structural differences between the remarkable ultrastable thin films and ordinary glasses.

Plasma Deposition of Silicon Clusters: A Way to Produce Silicon Thin Films With Medium-Range Order ?

1998 ◽  
Vol 507 ◽  
Author(s):  
P. Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Plasma Deposition ◽  
Random Network ◽  
Range Order ◽  
Homogeneous Material ◽  
Silicon Clusters ◽  
Medium Range Order ◽  
Silicon Thin Films ◽  
Medium Range

ABSTRACTThe growth of hydrogenated amorphous silicon films is often explained by the arrival of SiHx radicals on the substrate and the subsequent cross-linking reactions leading to an homogeneous material which can be described by a continuous random network. Here we summarize our recent Work on a new class of silicon thin films produced under plasma conditions where silicon clusters and radicals contribute to the deposition. The main aspects are: i) silicon clusters with sizes of the order of 1-5 nm are easily formed in silane plasmas; ii) these silicon clusters can contribute to the deposition and lead to the formation of films with medium-range order (“polymorphous silicon”); iii) despite their heterogeneity, the films have improved transport properties and stability with respect to a-Si:H. The excellent transport properties are confirmed by the achievement of stable single junction p-i-n solar cells with efficiencies close to 10 %.

scholarly journals Short and Medium-Range Order in Liquid Ternary Al80Co10Ni10, Al72.5Co14.5Ni13, and Al65Co17.5Ni17.5 Alloys

2010 ◽  
Vol 65 (1-2) ◽  
pp. 123-131 ◽  
Author(s):  
Oleksandr S. Roik ◽  
Oleksiy Samsonnikov ◽  
Volodymyr Kazimirov ◽  
Volodymyr Sokolskii
Keyword(s):  
Three Dimensional ◽  
Range Order ◽  
Ternary Alloys ◽  
X Ray Diffraction ◽  
Medium Range Order ◽  
Intermediate Range Order ◽  
Transition Metal Atoms ◽  
Medium Range ◽  
Three Dimensional Models ◽  
Co Alloys

AbstractA local short-to-intermediate range order of liquid Al80Co10Ni10, Al72.5Co14.5Ni13, and Al65Co17.5Ni17.5 alloys was examined by X-ray diffraction and the reverse Monte Carlo modelling. The comprehensive analysis of three-dimensional models of the liquid ternary alloys was performed by means of the Voronoi-Delaunay method. The existence of a prepeak on the S(Q) function of the liquid alloys is caused by medium range ordering of 3d-transition metal atoms in dense-packed polytetrahedral clusters at temperatures close to the liquidus. The non-crystalline clusters, represented by aggregates of pentagons that consist of good tetrahedra, and chemical short-range order lead to the formation of the medium range order in the liquid binary Al-Ni, Al-Co and ternary Al-Ni-Co alloys.

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

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