scholarly journals Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Un-Bin Han ◽  
Jang-Sik Lee
Keyword(s):  
Resistive Switching ◽  
Room Temperature ◽  
High Density ◽  
Integration Scheme ◽  
Bottom Up ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High‐Density Resistive Switching Memory

2019 ◽  
Vol 31 (49) ◽  
pp. 1903679 ◽  
Author(s):  
Junjiang Tian ◽  
Haijun Wu ◽  
Zhen Fan ◽  
Yang Zhang ◽  
Stephen J. Pennycook ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Resistive Switching ◽  
High Density ◽  
Epitaxial Thin Films ◽  
Resistive Switching Memory ◽  
Switching Memory

Hydrothermal synthesis of nanoporous lead selenide thin films: photoelectrochemical and resistive switching memory applications

2019 ◽  
Vol 30 (19) ◽  
pp. 17725-17734 ◽  
Author(s):  
Tejasvinee S. Bhat ◽  
Archana S. Kalekar ◽  
Dhanaji S. Dalavi ◽  
Chetan C. Revadekar ◽  
Atul C. Khot ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrothermal Synthesis ◽  
Resistive Switching ◽  
Lead Selenide ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

HfO 2 -based resistive switching memory with CNTs electrode for high density storage

2017 ◽  
Vol 132 ◽  
pp. 19-23 ◽  
Author(s):  
W.K. Cheng ◽  
F. Wang ◽  
Y.M. Han ◽  
Z.C. Zhang ◽  
J.S. Zhao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Density ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Inorganic–organic hybrid polymer with multiple redox for high-density data storage

2014 ◽  
Vol 5 (9) ◽  
pp. 3404-3408 ◽  
Author(s):  
Benlin Hu ◽  
Chengyuan Wang ◽  
Jiangxin Wang ◽  
Junkuo Gao ◽  
Kai Wang ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Density ◽  
Hybrid Polymer ◽  
Density Data ◽  
Resistive Switching Memory ◽  
Organic Hybrid ◽  
Switching Memory

A multi-redox polyoxometalate-based hybrid polymer has been demonstrated to show multilevel resistive switching memory behaviors.

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

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