scholarly journals Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jiyoul Lee ◽  
Albert J. J. M. van Breemen ◽  
Vsevolod Khikhlovskyi ◽  
Martijn Kemerink ◽  
Rene A. J. Janssen ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Memory ◽  
Multilevel Data

scholarly journals Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  
Keyword(s):  
Data Storage ◽  
High Performance ◽  
Memory Performance ◽  
Resistive Memory ◽  
Molecular Systems ◽  
Threshold Voltages ◽  
Donor Acceptor ◽  
Low Threshold ◽  
Multilevel Memory ◽  
Further Development

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.

Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Multilevel Data ◽  
Data Retention ◽  
High Data ◽  
Fast Speed ◽  
Change Material

Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons

2011 ◽  
Vol 23 (18) ◽  
pp. 2064-2068 ◽  
Author(s):  
Jang-Sik Lee ◽  
Yong-Mu Kim ◽  
Jeong-Hwa Kwon ◽  
Jae Sung Sim ◽  
Hyunjung Shin ◽  
...  
Keyword(s):  
Data Storage ◽  
Capacitive Coupling ◽  
Memory Devices ◽  
Multilevel Data ◽  
Trapped Electrons

The incorporation of the ionization effect in organic semiconductors assists in triggering multilevel resistive memory behaviors

2020 ◽  
Vol 4 (11) ◽  
pp. 3280-3289 ◽  
Author(s):  
Cheng Zhang ◽  
Hua Li ◽  
Yanna Su ◽  
Fei Yu ◽  
Chao Li ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Data Storage ◽  
Ionic Form ◽  
Resistive Memory ◽  
Neutral Form ◽  
Ionization Effect ◽  
Storage Behavior

The ionic and zwitterionic semiconductors are stepwise fabricated from their neutral form, transforming the data-storage behavior from binary to ternary state. The unstable performance in the ionic form is caused by the migrated counterions.

scholarly journals Multilevel data storage memory based on polycrystalline SrTiO3 ultrathin film

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49753-49758 ◽  
Author(s):  
Pengfei Hou ◽  
Zhanzhan Gao ◽  
Kaikai Ni
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ultrathin Film ◽  
Multilevel Data ◽  
Access Memory ◽  
Operation Speed ◽  
Commercial Interest ◽  
High Scalability

Resistive switching random access memory (RRAM) has recently inspired scientific and commercial interest due to its high operation speed, high scalability, and multilevel data storage potential.

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