scholarly journals Picosecond optical vortex pulse illumination forms a monocrystalline silicon needle

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Fuyuto Takahashi ◽  
Katsuhiko Miyamoto ◽  
Hirofumi Hidai ◽  
Keisaku Yamane ◽  
Ryuji Morita ◽  
...  
2015 ◽  
Vol 213 (4) ◽  
pp. 1063-1068 ◽  
Author(s):  
Fuyuto Takahashi ◽  
Shun Takizawa ◽  
Hirofumi Hidai ◽  
Katsuhiko Miyamoto ◽  
Ryuji Morita ◽  
...  

Author(s):  
Fuyuto Takahashi ◽  
Honami Fujiwara ◽  
Kai Izumisawa ◽  
Katsuhiko Miyamoto ◽  
Hirofumi Hidai ◽  
...  

2021 ◽  
Vol 533 (7) ◽  
pp. 2170023
Author(s):  
Denis A. Ikonnikov ◽  
Sergey A. Myslivets ◽  
Vasily G. Arkhipkin ◽  
Andrey M. Vyunishev

Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.


2021 ◽  
Vol 103 (5) ◽  
Author(s):  
Kayn A. Forbes ◽  
Garth A. Jones
Keyword(s):  

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Liuhao Zhu ◽  
Miaomiao Tang ◽  
Hehe Li ◽  
Yuping Tai ◽  
Xinzhong Li

Abstract Generally, an optical vortex lattice (OVL) is generated via the superposition of two specific vortex beams. Thus far, OVL has been successfully employed to trap atoms via the dark cores. The topological charge (TC) on each optical vortex (OV) in the lattice is only ±1. Consequently, the orbital angular momentum (OAM) on the lattice is ignored. To expand the potential applications, it is necessary to rediscover and exploit OAM. Here we propose a novel high-order OVL (HO-OVL) that combines the phase multiplication and the arbitrary mode-controllable techniques. TC on each OV in the lattice is up to 51, which generates sufficient OAM to manipulate microparticles. Thereafter, the entire lattice can be modulated to desirable arbitrary modes. Finally, yeast cells are trapped and rotated by the proposed HO-OVL. To the best of our knowledge, this is the first realization of the complex motion of microparticles via OVL. Thus, this work successfully exploits OAM on OVL, thereby revealing potential applications in particle manipulation and optical tweezers.


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