scholarly journals Full Valley and Spin Polarizations in Strained Graphene with Rashba Spin Orbit Coupling and Magnetic Barrier

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Qing-Ping Wu ◽  
Zheng-Fang Liu ◽  
Ai-Xi Chen ◽  
Xian-Bo Xiao ◽  
Zhi-Min Liu
Keyword(s):  
Spin Polarization ◽  
Fermi Energy ◽  
Band Gaps ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Magnetic Barrier ◽  
Single Spin ◽  
Rashba Spin ◽  
Strained Graphene

Abstract We propose a graphene-based full valley- and spin-polarization device based on strained graphene with Rashba spin orbit coupling and magnetic barrier. The underlying mechanism is the coexistence of the valley and single spin band gaps in a certain Fermi energy. By aligning the Fermi energy in the valley and single spin band gaps, remarkable valley- and spin-polarization currents can be accessed.

scholarly journals Erratum: Corrigendum: Full Valley and Spin Polarizations in Strained Graphene with Rashba Spin Orbit Coupling and Magnetic Barrier

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Qing-Ping Wu ◽  
Zheng-Fang Liu ◽  
Ai-Xi Chen ◽  
Xian-Bo Xiao ◽  
Zhi-Min Liu
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Magnetic Barrier ◽  
Rashba Spin ◽  
Strained Graphene

scholarly journals Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces

2019 ◽  
Vol 100 (12) ◽  
Author(s):  
Yulin Gan ◽  
Yu Zhang ◽  
Dennis Valbjørn Christensen ◽  
Nini Pryds ◽  
Yunzhong Chen
Keyword(s):  
Spin Polarization ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Oxide Interfaces ◽  
Rashba Spin

SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG
Keyword(s):  
Spin Polarization ◽  
Coupling Strength ◽  
Channel Length ◽  
Ferromagnetic Semiconductor ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

Spin-polarization in a 3-terminal conductor induced by Rashba spin–orbit coupling

2005 ◽  
Vol 29 (3-4) ◽  
pp. 490-494 ◽  
Author(s):  
M. Yamamoto ◽  
J. Ohea ◽  
T. Ohtsuki ◽  
J. Nitta ◽  
B. Kramer
Keyword(s):  
Spin Polarization ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin
Sign in / Sign up

Export Citation Format

Share Document