scholarly journals Magnetization switching by combining electric field and spin-transfer torque effects in a perpendicular magnetic tunnel junction

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Xiangli Zhang ◽  
Chengjie Wang ◽  
Yaowen Liu ◽  
Zongzhi Zhang ◽  
Q. Y. Jin ◽  
...  
Keyword(s):  
Electric Field ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetization Switching

Double Magnetic Tunnel Junction with switchable assistance layer for improved spin transfer torque magnetic memory performance

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Sanchez Hazen ◽  
Stephane Auffret ◽  
Isabelle Joumard ◽  
Laurent Vila ◽  
Liliana Buda-Prejbeanu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Memory Performance ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Memory Cells ◽  
Experimental Demonstration

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junction comprising a magnetically switchable assistance layer. These double junctions are used as memory cells...

Reliable majority voter based on spin transfer torque magnetic tunnel junction device

2016 ◽  
Vol 52 (1) ◽  
pp. 47-49 ◽  
Author(s):  
P.F. Butzen ◽  
M. Slimani ◽  
Y. Wang ◽  
H. Cai ◽  
L.A.B. Naviner
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Junction Device ◽  
Majority Voter

Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

2016 ◽  
Vol 63 (4) ◽  
pp. 1762-1767 ◽  
Author(s):  
You Wang ◽  
Hao Cai ◽  
Lirida Alves de Barros Naviner ◽  
Yue Zhang ◽  
Xiaoxuan Zhao ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Dielectric Breakdown ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Compact Model

Switching Properties for MgO-Based Magnetic Tunnel Junction Devices Driven by Spin-Transfer Torque in the Nanosecond Regime

2011 ◽  
Vol 47 (3) ◽  
pp. 629-632 ◽  
Author(s):  
Jia-Mou Lee ◽  
Ching-Ming Lee ◽  
Lin-Xiu Ye ◽  
Juhng-Perng Su ◽  
Te-Ho Wu
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer

scholarly journals A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hyein Lim ◽  
Sora Ahn ◽  
Miryeon Kim ◽  
Seungjun Lee ◽  
Hyungsoon Shin
Keyword(s):  
Tunnel Junction ◽  
Giant Magnetoresistance ◽  
New Technology ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Mean Oscillation ◽  
Proposed Model ◽  
Level Model

Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR) STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ)-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

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