scholarly journals Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Qinke Wu ◽  
Ji-Hoon Park ◽  
Sangwoo Park ◽  
Seong Jun Jung ◽  
Hwansoo Suh ◽  
...  
2016 ◽  
Vol 5 (3) ◽  
Author(s):  
Toan Trong Tran ◽  
Cameron Zachreson ◽  
Amanuel Michael Berhane ◽  
Kerem Bray ◽  
Russell Guy Sandstrom ◽  
...  

2020 ◽  
Vol 12 (41) ◽  
pp. 46466-46475
Author(s):  
Xu Yang ◽  
Markus Pristovsek ◽  
Shugo Nitta ◽  
Yuhuai Liu ◽  
Yoshio Honda ◽  
...  

Science ◽  
2018 ◽  
Vol 362 (6416) ◽  
pp. 817-821 ◽  
Author(s):  
Joo Song Lee ◽  
Soo Ho Choi ◽  
Seok Joon Yun ◽  
Yong In Kim ◽  
Stephen Boandoh ◽  
...  

Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.


Author(s):  
Wioletta Dewo ◽  
Katarzyna Łuczyńska ◽  
Yuriy Zorenko ◽  
Vitaliy Gorbenko ◽  
Kacper Drużbicki ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.


1997 ◽  
Vol 282-287 ◽  
pp. 739-740 ◽  
Author(s):  
Zeng Jianlin ◽  
Wang Yan ◽  
Li Yongqing ◽  
J.G. Hou

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