scholarly journals In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Zheng Zuo ◽  
Zhongguang Xu ◽  
Renjing Zheng ◽  
Alireza Khanaki ◽  
Jian-Guo Zheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

scholarly journals Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

2015 ◽  
Vol 106 (14) ◽  
pp. 143105 ◽  
Author(s):  
K. E. Aretouli ◽  
P. Tsipas ◽  
D. Tsoutsou ◽  
J. Marquez-Velasco ◽  
E. Xenogiannopoulou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures

Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds

1989 ◽  
Vol 169 ◽  
Author(s):  
D.G. Schlomtt ◽  
J.N. Eckstein ◽  
I. Bozo Vic ◽  
A.F. Marshall ◽  
J.T. Sizemore ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Cuprate Superconductors ◽  
Molecular Beams ◽  
Atomic Scale ◽  
Superconducting Film ◽  
Mbe Growth

AbstractThe in situ epitaxial growth of Bi‐Sr‐Ca‐Cu‐O films by molecular beam epitaxy (MBE) is reported. The suitability of ozone to the MBE growth of cuprate superconductors is discussed. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Can‐1CunOx phases, including 2201, 2212,2223,2245, and layered mixtures of these phases. Using these techniques a superconducting film with TConset near 100 K and Tc (ρ=0) of 81 K was achieved under entirely MBE conditions (Pchamber≤xl0‐4 Torr during growth and cooling). The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE growth to selectively grow Bi2Sr2Can‐1CunOx phases.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

scholarly journals In situ nanoscale imaging of moiré superlattices in twisted van der Waals heterostructures

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Yue Luo ◽  
Rebecca Engelke ◽  
Marios Mattheakis ◽  
Michele Tamagnone ◽  
Stephen Carr ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Nanoscale Imaging

scholarly journals Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

2021 ◽  
pp. 2100438
Author(s):  
Wouter Mortelmans ◽  
Karel De Smet ◽  
Ruishen Meng ◽  
Michel Houssa ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Van Der Waals

Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy

2011 ◽  
Vol 29 (1) ◽  
pp. 01A801 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Jean-Pierre Locquet ◽  
Jin Won Seo ◽  
Christel Dieker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy
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