scholarly journals Origin of near to middle infrared luminescence and energy transfer process of Er3+/Yb3+co-doped fluorotellurite glasses under different excitations

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Feifei Huang ◽  
Xueqiang Liu ◽  
Yaoyao Ma ◽  
Shuai Kang ◽  
Lili Hu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Transfer Process ◽  
Energy Transfer Process ◽  
Infrared Luminescence ◽  
Middle Infrared ◽  
Co Doped

Luminescence properties and energy transfer of Ce3+/Tb3+ co-doped Ca6Ba(PO4)4O phosphor for near-UV pumped light-emitting diodes

2015 ◽  
Vol 3 (16) ◽  
pp. 4197-4204 ◽  
Author(s):  
Mingyue Chen ◽  
Zhiguo Xia ◽  
Quanlin Liu
Keyword(s):  
Energy Transfer ◽  
Transfer Process ◽  
Light Emitting Diodes ◽  
Energy Transfer Process ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Co Doped

The energy transfer process from Ce3+ to Tb3+ in Ca6Ba(PO4)4O and its mechanisms have been studied.

Resonant excitation of Er3+ by the energy transfer from Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Kei Watanabe ◽  
Minoru Fujii ◽  
Shinji Hayashi
Keyword(s):  
Energy Transfer ◽  
Transfer Process ◽  
Quantum Confinement ◽  
Energy Transfer Process ◽  
Exciton Energy ◽  
Si Nanocrystals ◽  
Wide Range ◽  
Exciton Recombination ◽  
Average Size ◽  
Co Doped

AbstractPhotoluminescence (PL) of SiO2 films co-doped with Si nanocrystals (nc-Si) and Er was studied. The average size of nc-Si was changed in a wide range in order to tune the exciton energy of nc-Si to the energy separations between the discrete electronic states of Er3+. PL from exciton recombination in nc-Si and the intra-4f shell transition of Er3+ were observed simultaneously. At low temperatures, periodic features were observed in the PL spectrum of nc-Si. The period agreed well with the optical phonon energy of Si. The appearance of the phonon structures implies that nc-Si which satisfy the energy conservation rule during the energy transfer process can resonantly excite Er3+. The effects of the quantum confinement of excitons in nc-Si on the energy transfer process are discussed.

Experimental evidence for quantum cutting co-operative energy transfer process in Pr3+/Yb3+ ions co-doped fluorotellurite glass: dispute over energy transfer mechanism

2016 ◽  
Vol 18 (48) ◽  
pp. 33115-33125 ◽  
Author(s):  
Sathravada Balaji ◽  
Debarati Ghosh ◽  
Kaushik Biswas ◽  
Gaurav Gupta ◽  
Kalyandurg Annapurna
Keyword(s):  
Energy Transfer ◽  
Experimental Evidence ◽  
Transfer Process ◽  
Energy Transfer Process ◽  
Transfer Mechanism ◽  
Energy Transfer Mechanism ◽  
Quantum Cutting ◽  
Doped Materials ◽  
Co Doped

Pr3+/Yb3+ doped materials have been widely reported as quantum-cutting materials in recent times.

White luminescence and energy transfer process in Bi3+,Sm3+ co-doped Ca3Al2O6 phosphors

2015 ◽  
Vol 42 ◽  
pp. 233-236 ◽  
Author(s):  
LongJun Wang ◽  
Hai Guo ◽  
YunLe Wei ◽  
Hyeon Mi Noh ◽  
Jung Hyun Jeong
Keyword(s):  
Energy Transfer ◽  
Transfer Process ◽  
Energy Transfer Process ◽  
White Luminescence ◽  
Co Doped

scholarly journals Luminescence and energy transfer process in Cu^+,Sm^3+ co-doped sodium silicate glasses

2014 ◽  
Vol 4 (2) ◽  
pp. 315 ◽  
Author(s):  
JingWen Yang ◽  
Hai Guo ◽  
YunLe Wei ◽  
Hyeon Mi Noh ◽  
Jung Hyun Jeong
Keyword(s):  
Energy Transfer ◽  
Sodium Silicate ◽  
Transfer Process ◽  
Energy Transfer Process ◽  
Silicate Glasses ◽  
Co Doped

Luminescence Properties of a Multi-Component Glass Co-Implanted with Si and Er

2004 ◽  
Vol 99-100 ◽  
pp. 37-40
Author(s):  
F. Enrichi ◽  
G. Mattei ◽  
C. Sada ◽  
E. Trave ◽  
Elisabetta Borsella ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Transfer Process ◽  
Optical Amplifiers ◽  
Energy Transfer Process ◽  
Optical Amplifier ◽  
Silica Substrate ◽  
Annealing Temperatures ◽  
Infrared Luminescence ◽  
Er Doped ◽  
Post Implantation

The incorporation of Si-nc in Er doped silica is known to strongly enhance the infrared luminescence of Er3+ at 1.54µm. The enhancement is believed to be due to an energy transfer process from Si-nc to Er. In this work we investigate the formation of Si nano-aggregates and their role in the energy transfer process to Er3+ ions for a multi-component glass host. These materials can offer better performances than silica in terms of Er solubility and band broadness for integrated Er-doped optical amplifiers and investigation is therefore very interesting for optoelectronic applications. Si and Er were co-implanted by choosing the implantation energies in order to optimize the overlap between the concentration profiles. The precipitation of Si and the enhancement of the 1.54 µm Er emission were studied for different post-implantation annealing temperatures. In particular the optical properties of the glass were investigated by means of photoluminescence (PL) spectroscopy and the results are discussed in relation to a standard silica substrate. These data are presented and related to the structural properties of the material. Moreover the implications on the future development of an Er doped optical amplifier are discussed.

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