scholarly journals Unabridged phase diagram for single-phased FeSexTe1-x thin films

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Jincheng Zhuang ◽  
Wai Kong Yeoh ◽  
Xiangyuan Cui ◽  
Xun Xu ◽  
Yi Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Diagram

Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1612-1621 ◽  
Author(s):  
M. Li ◽  
F. Zhang ◽  
W. T. Chen ◽  
K. Zeng ◽  
K. N. Tu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Solid State ◽  
Brittle Failure ◽  
Ternary Phase ◽  
Interfacial Microstructure ◽  
Snagcu Solder ◽  
Ball Shear ◽  
Aging Study ◽  
Eutectic Snpb

The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.

scholarly journals From zirconia to yttria: Sampling the YSZ phase diagram using sputter-deposited thin films

AIP Advances ◽  
2016 ◽  
Vol 6 (2) ◽  
pp. 025119 ◽  
Author(s):  
Thomas Götsch ◽  
Wolfgang Wallisch ◽  
Michael Stöger-Pollach ◽  
Bernhard Klötzer ◽  
Simon Penner
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Sputter Deposited

Quaternary Phase Equilibria in the Ti-Si-N-O System: Stability of Metallization Layers and Prediction of Thin Film Reactions

1989 ◽  
Vol 148 ◽  
Author(s):  
A.S. Bhansali ◽  
R. Sinclair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagram ◽  
Phase Equilibria ◽  
System Stability ◽  
Multicomponent Systems ◽  
Phase Rule ◽  
Quaternary Phase ◽  
Circuit Fabrication ◽  
Quaternary Phase Equilibria

ABSTRACTDuring high temperature circuit fabrication, metallization layers can come in contact with both solids and gases. Their stability can be addressed with the aid of phase equilibria. Using the Gibbs phase rule as a basis, a method for generating phase diagrams for multicomponent systems can be established. This procedure is described and illustrated by reference to the quaternary phase diagram of Ti-Si-N-O. This phase diagram can then be used to predict stability and/or reactions in metallization layers and thin films.

Effect of Microstructure on Phase Formation in Reaction of The Nb/Al Multilayer Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Katayun Barmak ◽  
Kevin R. Coffey ◽  
David A. Rudman ◽  
Simon Foner
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagram ◽  
Grain Boundary ◽  
Phase Formation ◽  
Boundary Diffusion ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram ◽  
Thin Layers ◽  
Multilayer Thin Films

AbstractWe investigated the phase formation sequence in the reaction of multilayer thin films of Nb/Al with overall compositions of 25 and 33 at.% AI. We report novel phenomena which distinguish thin-film reactions unequivocally from those in bulk systems. For sufficiently thin layers composition and stability of product phases are found to deviate significantly from that predicted from the equilibrium phase diagram. We demonstrate that in the Nb/Al system the length scales below which such deviations occur is about 150 nm. We believe that these phenomena occur due to the importance of grain boundary diffusion and hence microstructure in these thin films.

LPE Growth of Textured KNbO3 Film Using SrTiO3 Substrate and V2O5 Flux

2006 ◽  
Vol 11-12 ◽  
pp. 109-112
Author(s):  
T. Hibino ◽  
Kenichi Kakimoto ◽  
Hitoshi Ohsato
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Growth Rate ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature ◽  
Film Growth ◽  
Lower Growth ◽  
Lower Growth Temperature

KNbO3 thin films were grown on (100) and (110) SrTiO3 substrates by liquid phase epitaxy (LPE) technique. The film orientation and surface morphology were characterized by XRD and AFM, respectively. The limited phase diagram of K2O-Nb2O5-V2O5 system was prepared by DTA measurement to investigate the effect of V2O5 flux on the LPE growth of KNbO3 film. The use of V2O5 flux enhanced a film growth rate at lower growth temperature.

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