scholarly journals Investigation of the open-circuit voltage in solar cells doped with quantum dots

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Takeshi Tayagaki ◽  
Yusuke Hoshi ◽  
Noritaka Usami
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit

scholarly journals CdSe Quantum Dots Sensitized Mesoporous TiO2Solar Cells with CuSCN as Solid-State Electrolyte

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Guanbi Chen ◽  
Lei Wang ◽  
Yu Zou ◽  
Xia Sheng ◽  
Hongjuan Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solid State ◽  
Barrier Layer ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Cdse Quantum Dots ◽  
Solid State Electrolyte ◽  
Capping Agents ◽  
Organic Capping

Mesoporous TiO2is functionalized by 3-mercaptopropyl trimethyoxysilane (MPTMS) to anchor CdSe quantum dots (QDs). The resulting TiO2/CdSe is combined with solid-state electrolyte (CuSCN) to form solar cells. It is found that the efficiency of electron injection from QDs to TiO2can be improved owing to the substitution of the long chains of organic capping agents at the surface of QDs with MPTMS. The hydrolyzate of MPTMS forms an insulating barrier layer to reduce the recombination at the TiO2/CdSe interface, leading to the increase of open-circuit voltage (Voc).

Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells

2013 ◽  
Vol 1551 ◽  
pp. 143-148
Author(s):  
R. Vasan ◽  
Y. F. M. Makableh ◽  
J. C. Sarker ◽  
M. O. Manasreh
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Power Conversion ◽  
Open Circuit ◽  
Interband Transitions ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTSolar cells based on InAs quantum dots embedded in InxGa1-xAs quantum wells grown on n-type GaAs substrate were fabricated and tested. Solar cells with In mole fraction (x) in the range of 0-40% were investigated. The performance of the solar cells was evaluated using current-voltage characteristics, spectral response, and quantum efficiency measurements. The spectral response and quantum efficiency spectra possess several peaks along the lower energy side of the spectra, which are attributed to the interband transitions in the structure. These peaks are red shifted as x is increased above 0 %. The device power conversion efficiency was extracted from the current-voltage characteristics using an AM 1.5 solar simulator. The short circuit current density increased as the x is increased above 0 %. But the overall power conversion efficiency decreased due to decrease in the open circuit voltage. The decrease in open circuit voltage is due strain induced dislocations caused by lattice mismatch.

Novel bifunctional aromatic linker utilized in CdSe quantum dots-sensitized solar cells: boosting the open-circuit voltage and electron injection

2017 ◽  
Vol 5 (27) ◽  
pp. 14319-14330 ◽  
Author(s):  
Wei-Lu Ding ◽  
Xing-Liang Peng ◽  
Zhu-Zhu Sun ◽  
Ze-Sheng Li
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Electron Injection ◽  
Open Circuit ◽  
Cdse Quantum Dots ◽  
Sensitized Solar Cells

The designed novel PDTCA series linkers.

The photovoltaic performance of Ag2S quantum dots-sensitized solar cells using plasmonic Au nanoparticles/TiO2 working electrodes

2018 ◽  
Vol 32 (16) ◽  
pp. 1850172 ◽  
Author(s):  
Ali Badawi ◽  
Nasser Y. Mostafa ◽  
Najm M. Al-Hosiny ◽  
Amar Merazga ◽  
Ateyyah M. Albaradi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Electron Microscope ◽  
Au Nanoparticles ◽  
Open Circuit Voltage ◽  
Photovoltaic Performance ◽  
Open Circuit ◽  
Morphological Properties ◽  
Au Nps ◽  
Sensitized Solar Cells

The photovoltaic performance of silver sulfide (Ag2S) quantum dots-sensitized solar cells (QDSSCs) using different concentrations (0, 0.05, 0.1, 0.3 and 0.5 wt.%) of plasmonic Au nanoparticles (NPs)/titania (TiO2) electrodes has been investigated. Ag2S quantum dots (QDs) were adsorbed onto the Au NPs/titania electrodes using the successive ionic layer adsorption and reaction (SILAR) deposition technique. The morphological properties of the Au NPs and the prepared titania electrodes were characterized using transmission electron microscope (TEM) and scanning electron microscope (SEM), respectively. The energy-dispersive X-ray (EDX) spectra of the bare titania and Ag2S QDs-sensitized titania electrodes were recorded. The optical properties of the prepared Ag2S QDs-sensitized titania electrodes were measured using a UV–visible spectrophotometer. The estimated energy band gap of Ag2S QDs-sensitized titania electrodes is 1.96 eV. The photovoltaic performance of the assembled Ag2S QDSSCs was measured under 100 mW/cm2 solar illumination. The optimal photovoltaic parameters were obtained as follows: open circuit voltage [Formula: see text] = 0.50 V, current density [Formula: see text] = 3.18 mA/cm2, fill factor (FF) = 0.35 and energy conversion efficiency [Formula: see text] = 0.55% for 0.3 wt.% of Au NPs/titania electrode. These results are attributed to the enhancement in the absorption and decrease in the electron–hole pairs recombination rate. The open circuit voltage decay (OCVD) measurements of the assembled Ag2S QDSSCs were measured. The calculated electron lifetime [Formula: see text] in Ag2S QDSSCs with Au NPs/titania electrodes is at least one order of magnitude more than that with bare titania electrode. The cut-on–cut-off cycles of the solar illumination measurements show the rapid sensitivity and good reproducibility of the assembled Ag2S QDSSCs.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Reducing recombination and enhancing open circuit voltage by Strontium-alloying in multiple cation perovskite solar cells

2017 ◽  
Author(s):  
Pietro Caprioglio ◽  
Fengshuo Zu ◽  
Christian M. Wolff ◽  
Martin Stolterfhot ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit

Monolithic perovskite silicon tandem solar cells with high-bandgap perovskite absorber exceeding 1.8 V open-circuit voltage

2019 ◽  
Author(s):  
Kristina M. Winkler ◽  
Ines Ketterer ◽  
Alexander J. Bett ◽  
Özde Kabakli ◽  
Martin Bivour ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells
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