scholarly journals Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals

2013 ◽  
Vol 7 (11) ◽  
pp. 925-930 ◽  
Author(s):  
Gregory C. Dyer ◽  
Gregory R. Aizin ◽  
S. James Allen ◽  
Albert D. Grine ◽  
Don Bethke ◽  
...  
Keyword(s):  
Defect States ◽  
Plasmonic Crystals ◽  
Induced Transparency

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

EPR spectra and defect states in glasses of the GexS100-x system

1982 ◽  
Vol 47 (7) ◽  
pp. 1787-1793 ◽  
Author(s):  
Miloslav Frumar ◽  
Gustáv Plesch ◽  
Eva Černošková ◽  
Václav Černý ◽  
Ladislav Tichý ◽  
...  
Keyword(s):  
Experimental Data ◽  
Epr Spectra ◽  
Defect States ◽  
Composition Region ◽  
Active Defect ◽  
Temperature Conditions ◽  
Defect Centres

Glasses of the GexS100-x system were studied in the region of 30 ⪬ x ⪬ 45. The concept of magnetically active defect centres was employed to account for the EPR spectra of pure samples as well as those doped with silver or iodine, prepared in different temperature conditions. In terms of this concept a consistent interpretation of the experimental data could be given for the composition region applied.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Hybrid Waveguide-integrated Plasmonic Crystals on Silicon-on-Insulator Platform

2016 ◽  
Author(s):  
Guanghui Ren ◽  
Thach Nguyen ◽  
Iryna Khodasevych ◽  
Steffen Schoenhardt ◽  
Kyle J. Berean ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Plasmonic Crystals ◽  
Hybrid Waveguide

scholarly journals Spontaneous emission control in high-extraction efficiency plasmonic crystals

2008 ◽  
Vol 16 (1) ◽  
pp. 426 ◽  
Author(s):  
Hideo Iwase ◽  
Dirk Englund ◽  
Jelena Vuckovic
Keyword(s):  
Spontaneous Emission ◽  
Extraction Efficiency ◽  
Emission Control ◽  
Plasmonic Crystals
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