scholarly journals Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field

2017 ◽  
Vol 12 (8) ◽  
pp. 757-762 ◽  
Author(s):  
Chuan Zhao ◽  
Tenzin Norden ◽  
Peiyao Zhang ◽  
Puqin Zhao ◽  
Yingchun Cheng ◽  
...  
Keyword(s):  
Exchange Field ◽  
Magnetic Exchange ◽  
Valley Splitting

scholarly journals The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1642
Author(s):  
Yifeng Lin ◽  
Changcheng Zhang ◽  
Lixiu Guan ◽  
Zhipeng Sun ◽  
Junguang Tao
Keyword(s):  
Proximity Effect ◽  
Tensile Strain ◽  
Strain Effect ◽  
Easy Magnetization ◽  
Magnetic Exchange ◽  
Group Iii ◽  
Valley Splitting ◽  
Out Of Plane ◽  
Potential Applications ◽  
Magnetic Proximity Effect

The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe dxy and dx2−y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.

The magnetic exchange field acting at the rare earth ions in rare earth iron garnets

1964 ◽  
Vol 11 (3) ◽  
pp. 195-196 ◽  
Author(s):  
M.E. Caspari ◽  
A. Koicki ◽  
S. Koicki ◽  
G.T. Wood
Keyword(s):  
Rare Earth ◽  
Rare Earth Ions ◽  
Exchange Field ◽  
Magnetic Exchange ◽  
Iron Garnets ◽  
The Rare Earth

scholarly journals Dopant Introduced Valley Polarization, Spin, and Valley Hall Conductivity in Doped Monolayer MoS2

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Sintayehu Mekonnen ◽  
Pooran Singh
Keyword(s):  
Hall Conductivity ◽  
Time Inversion ◽  
Spin Orbit Coupling ◽  
Effective Hamiltonian ◽  
Exchange Field ◽  
Monolayer Mos2 ◽  
Magnetic Exchange ◽  
Valley Polarization ◽  
Low Power Electronics ◽  
Spin Hall Conductivity

We study valley polarization, spin, and valley Hall conductivity in doped monolayer MoS2 considering dopant introduced magnetic exchange field using low energy effective Hamiltonian. We found that dopant introduced magnetic exchange field breaks the time inversion symmetry and decouples the energetically degenerated valleys into nondegenerate. Moreover, the calculated result reveals that, at low temperature, in insulating regime, anomalous Hall conductivity in a single valley and the total valley Hall conductivity are quantized, whereas the total spin Hall conductivity vanishes identically. We also found that the strength of the spin-orbit coupling together with the exchange field determines the valley polarization, which in turn controls valley and spin Hall conductivity in doped monolayer MoS2 system. The spin Hall and valley Hall conductivity is dissipationless in the absence of any external magnetic field. Therefore, our results are crucial to generate low power electronics devices.

scholarly journals Spatial aspects of spin polarization of structurally split surface states in thin films with magnetic exchange and spin-orbit interaction

2021 ◽  
Author(s):  
Ilya A. Nechaev ◽  
Eugene Krasovskii
Keyword(s):  
Spin Density ◽  
Electron Scattering ◽  
Noble Metals ◽  
Large Angle ◽  
Surface States ◽  
Film Surface ◽  
Electronic System ◽  
Exchange Field ◽  
Magnetic Exchange ◽  
Directed Group

Abstract A theoretical study is presented of the effect of an in-plane magnetic exchange field on the band structure of centrosymmetric films of noble metals and topological insulators. Based on an ab initio relativistic k·p theory, a minimal effective model is developed that describes two coupled copies of a Rashba or Dirac electronic system residing at the opposite surfaces of the film. The coupling leads to a structural gap at Γ and causes an exotic redistribution of the spin density in the film when the exchange field is introduced. We apply the model to a nineteen-layer Au(111) film and to a five-quintuple-layer Sb2Te3 film. We demonstrate that at each film surface the exchange field induces spectrum distortions similar to those known for Rashba or Dirac surface states with an important difference due to the coupling: At some energies, one branch of the state loses its counterpart with the oppositely directed group velocity. This suggests that a large-angle electron scattering between the film surfaces through the interior of the film is dominant or even the only possible for such energies. The spin-density redistribution accompanying the loss of the counterpart favors this scattering channel.

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

Valley splitting in triangular Si(001) quantum wells

1996 ◽  
Vol 54 (23) ◽  
pp. 16393-16396 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Valley Splitting

A new 1-1-4 pattern of magnetic exchange interactions in a cubane core tetranuclear copper (II) complex

Polyhedron ◽  
2021 ◽  
Vol 199 ◽  
pp. 115088
Author(s):  
Azadeh Mehrani ◽  
Maurice G. Sorolla ◽  
Tatyana Makarenko ◽  
Allan J. Jacobson
Keyword(s):  
Exchange Interactions ◽  
Magnetic Exchange
Sign in / Sign up

Export Citation Format

Share Document