scholarly journals High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

2016 ◽  
Vol 12 (3) ◽  
pp. 223-227 ◽  
Author(s):  
Denis A. Bandurin ◽  
Anastasia V. Tyurnina ◽  
Geliang L. Yu ◽  
Artem Mishchenko ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Mobility ◽  
Quantum Hall ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response

2009 ◽  
Vol 6 (6) ◽  
pp. 1386-1389 ◽  
Author(s):  
Hirohisa Taguchi ◽  
Nobuhito Wakimura ◽  
Yugo Nakagawa ◽  
Tsutomu Iida ◽  
Yoshifumi Takanashi
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High-speed optical response of pseudomorphic InGaAs high electron mobility transistors

1992 ◽  
Vol 4 (9) ◽  
pp. 1012-1014 ◽  
Author(s):  
M.Z. Martin ◽  
F.K. Oshita ◽  
M. Matloubian ◽  
H.R. Fetterman ◽  
L. Shaw ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Speed ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Strain-tunable electronic structure, optical response, and high electron mobility of Bi2O2Se crystals

APL Materials ◽  
2019 ◽  
Vol 7 (8) ◽  
pp. 081110 ◽  
Author(s):  
Xiaoyu Huang ◽  
Chun-Yao Niu ◽  
Jinping Zhang ◽  
Aihua Wang ◽  
Yu Jia ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Mobility ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility

Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF03 ◽  
Author(s):  
Hirohisa Taguchi ◽  
Yasuyuki Oishi ◽  
Takahisa Ando ◽  
Kazuya Uchimura ◽  
Miho Mochiduki ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Optical Response ◽  
High Electron ◽  
High Electron Mobility ◽  
Ultrafast Optical ◽  
Electron Mobility Transistors

Anomalous Hall Effect in Gd-implanted Wurtzite AlxGa1-xN High Electron Mobility Transistor Structures

2008 ◽  
Vol 1111 ◽  
Author(s):  
Fang-Yuh Lo ◽  
Alexander Melnikov ◽  
Dirk Reuter ◽  
Yvon Cordier ◽  
Andreas D. Wieck
Keyword(s):  
Hall Effect ◽  
Electron Mobility ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Magnetic Ordering ◽  
High Electron Mobility Transistor ◽  
Anomalous Hall Effect ◽  
Sample Surface ◽  
High Electron ◽  
High Electron Mobility

AbstractAlxGa1- xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG, which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

scholarly journals Topological Kagome Magnet Co3Sn2S2 Thin Flakes with High Electron Mobility and Large Anomalous Hall Effect

Nano Letters ◽  
2020 ◽  
Vol 20 (10) ◽  
pp. 7476-7481
Author(s):  
M. Tanaka ◽  
Y. Fujishiro ◽  
M. Mogi ◽  
Y. Kaneko ◽  
T. Yokosawa ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electron Mobility ◽  
Anomalous Hall Effect ◽  
High Electron ◽  
High Electron Mobility
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